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1600-2100 Datasheet PDF File

For 1600-2100 Found Datasheets File :: 1606 Search Time::1.235ms
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				IRF[International Rectifier]
Part No.	IRFPC50A
OCR Text	...OM VDS L D R IV E R 1600 ID 4.9A 7.0A 11A RG 20V tp D .U .T IA S + V - DD 1200 A 0 .0 1 800 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 400 0 25 50 75 100 125 150 Starting TJ ...
Description	Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A)
File Size	94.48K / 8 Page	View it Online	Download Datasheet

				Ericsson Microelectronics
Part No.	PTF10021
OCR Text	...n Loss (dB) -15 20 -25 10 -35 0 1600 Gain (dB) Gain 13 12 11 Gain (dB) 10 8 6 4 1400 VDD = 28 V IDQ = 360 mA POUT = 10 W V...2100 2200 S11 Mag 0.938 0.949 0.988 0.993 0.993 0.991 0.990 0.993 0.998 0.999 1.000 0.996 0.898 ...
Description	30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦，1.4-1.6 GHzGOLDMOS场效应晶体管 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor
File Size	277.83K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10043
OCR Text	...0 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.912 0.917 0.951 0.964 0.971 0.974 0.975 0.975 0.980 0.979 0.981 0.977 0.975 0.965 0.951 0.929 0.904 0.885 0.892 0.918 0.942 0.964 S21 Ang -143 -150 -163 -1...
Description	12 Watts/ 1.9-2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 1.9.0 GHz GOLDMOS Field Effect Transistor
File Size	234.06K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10053
OCR Text	...0 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S11 Mag 0.806 0.800 0.850 0.878 0.900 0.914 0.925 0.932 0.941 0.947 0.957 0.961 0.963 0.963 0.963 0.964 0.968 0.972 0.976 0.978 0.976 0.975 S21 Ang -117 -127 -149 -1...
Description	12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	79.85K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10111
OCR Text	...ow er (W) 10 5 0 1300 1400 1500 1600 1700 16 60 Efficiency (%) 50 15 Gain (dB) Gain (dB) 40 VDD = 28 V 14 IDQ = 75 ...2100 2200 S11 Mag 0.867 0.832 0.843 0.844 0.852 0.862 0.868 0.874 0.882 0.886 0.893 0.899 0.907 ...
Description	6 Watts/ 1.5 GHz GOLDMOS Field Effect Transistor 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor
File Size	336.82K / 6 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTF10135
OCR Text	...0 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 S11 Mag 0.874 0.889 0.892 0.897 0.903 0.860 0.873 0.873 0.891 0.890 0.904 0.896 0.932 0.932 0.950 0.955 0.959 0.945 0.946 0.949 0.953 0.946 S21 Ang -58 -11...
Description	5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	244.79K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10137
OCR Text	...0 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 Mag 0.862 0.866 0.872 0.881 0.888 0.896 0.905 0.910 0.920 0.927 0.932 0.940 0.942 0.948 0.953 0.955 0.958 0.961 0.963 0.967 0.967 0.967 0.9...
Description	12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
File Size	174.57K / 6 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
Part No.	STP20NE10 6050
OCR Text	... 1 MHz I D =10 A VGS = 0 Min. 6 1600 180 50 2100 250 70 Typ . Max. Un it S pF pF pF 2/8 STP20NE10 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge...
Description	N - CHANNEL 100V - 0.07ohm - 20A - TO-220 STripFET MOSFET - 100V的通道- 0.07ohm - 20A对MOSFET20 STripFET From old datasheet system N - CHANNEL 100V - 0.07 - 20A - TO-220 STripFET TM MOSFET
File Size	81.44K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	110MT160K 110MT160KB 110MT160MT 90MT80KB 110MT100K 110MT100KB 110MT120K 110MT120KB 110MT140K 110MT140KB 110MT80K 110MT80KB 90MT 90MT100K 90MT100KB 90MT120K 90MT120KB 90MT140K 90MT140KB 90MT160K 90MT160KB 90MT160MT 90MT80K 110MT140KBPBF
OCR Text	...000 a 2 s v rrm range 800 to 1600 v t stg range - 40 to 150 c t j range - 40 to 150 c major ratings and characteristics features pack...2100 3200 t = 10ms 100% v rrm 1900 2900 t = 8.3ms reapplied i 2 t maximum i 2 t for fusing 30000 4...
Description	3 PHASE, 110 A, 1400 V, SILICON, BRIDGE RECTIFIER DIODE 1200V 3 Phase Bridge in a INT-A-Pak package 1600V 3 Phase Bridge in a INT-A-Pak package 1000V 3 Phase Bridge in a INT-A-Pak package 1400V 3 Phase Bridge in a INT-A-Pak package 800V 3 Phase Bridge in a INT-A-Pak package THREE PHASE BRIDGE CAP 3300PF 100V 100V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 三相桥式 3 PHASE, 90 A, 1200 V, SILICON, BRIDGE RECTIFIER DIODE
File Size	94.16K / 7 Page	View it Online	Download Datasheet

For 1600-2100 Found Datasheets File :: 1606 Search Time::1.235ms
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