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SIEMENS AG
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| Part No. |
SKA06N60
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| OCR Text |
...4v 6v 8v 10v 0a 2a 4a 6a 8a 10a 12a 14a 16a 18a 20a -55 c +150 c t j =+25 c v ce(sat) , collector - emitter saturation voltage -50 c...600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of ga... |
| Description |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
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| File Size |
235.00K /
13 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRG4BC30W_04 IRG4BC30WPBF IRG4BC30W04
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| OCR Text |
... max. = 2.70V
@VGE = 15V, IC = 12a
n-channel
Benefits
* Lower switching losses allow more cost-effective operation than power MOSFET...600v A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600v, TJ = 150C 100 nA VGE = 20V
Sw... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, Vce(on)max.=2.70V, @Vge=15V, Ic=12a)
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| File Size |
578.68K /
8 Page |
View
it Online |
Download Datasheet
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Price and Availability
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