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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4650 IHP10T120
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| OCR Text |
...timisation of inverse diode VCE 1200v IC 10a VCE(sat),Tj=25C 1.7V Tj,max 150C Marking H10T120
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C
G
E
P-TO-220-3-1 (TO-220AB)
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Type IHP10T120
Package TO-220-3-1
Ordering Code Q67040-S4650
Maximum Ratings P... |
| Description |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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| File Size |
331.26K /
14 Page |
 View
it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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| Part No. |
APT1201R5SVFR APT1201R5BVFR
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| OCR Text |
1200v 10a 1.500
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power ... |
| Description |
10 A, 1200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
POWER MOS V
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| File Size |
136.97K /
4 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SKW07N120
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| OCR Text |
...rn off safe operating area VCE 1200v, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emit...10a
tp=5s 15s
IC, COLLECTOR CURRENT
20A 15A
TC=80C
IC, COLLECTOR CURRENT
25A
50... |
| Description |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode 快速IGBT在不扩散核武器条约与软，恢复快反平行快恢复二极管技
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
IGBTs & DuoPacks - 7A 1200v TO247AC IGBT Diode
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| File Size |
401.08K /
13 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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