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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
RURG30120 FN3399
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| OCR Text |
... recovery characteristic (trr < 110ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a varie... |
| Description |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
30A/ 1200V Ultrafast Diode
From old datasheet system
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| File Size |
31.01K /
3 Page |
 View
it Online |
Download Datasheet
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INTERSIL[Intersil Corporation]
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| Part No. |
RURH30100CC FN2932
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| OCR Text |
...recovery characteristics (trr < 110ns). It has low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a var... |
| Description |
From old datasheet system
30A, 1000V Ultrafast Dual Diode
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| File Size |
32.32K /
3 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
RURP30100 FN2877
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| OCR Text |
...recovery characteristics (trr < 110ns). It has a low forward voltage drop and is of silicon nitride passivated, ion-implanted, epitaxial construction. This device is intended for use as a flywheel/clamping diode and rectifier in a variety o... |
| Description |
From old datasheet system
30A, 1000V Ultrafast Diode
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| File Size |
30.68K /
3 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
RURP30120 FN3397
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| OCR Text |
... recovery characteristic (trr < 110ns). It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a varie... |
| Description |
From old datasheet system
30A, 1200V Ultrafast Diode
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| File Size |
30.97K /
3 Page |
View
it Online |
Download Datasheet |
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OKI ELECTRIC INDUSTRY CO LTD
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| Part No. |
MSC23V26418TD-XXBS8 MSC23V26418TD MSC23V26418TD-60BS8
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| OCR Text |
...5ns 20ns Cycle Time (Min.) 90ns 110ns 130ns Power Dissipation (Max.) Operating 1872mW 1728mW 1584mW 14.4mW Standby
Family
Semiconductor
MSC23V26418TD
MODULE OUTLINE
MSC23V26418TD-xxBS8
(Unit : mm) 133.350.7 *1 131.35 TYP 2 - R... |
| Description |
2M X 64 FAST PAGE DRAM MODULE, 60 ns, DMA168
From old datasheet system
2,097,152-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
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| File Size |
56.08K /
10 Page |
View
it Online |
Download Datasheet |
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