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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB045AN08A0_06 FDB045AN08A0
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| OCR Text |
...80A Ig = 1.0mA 6600 1000 240 92 11 27 16 21 138 17 pF pF pF nC nC nC nC nC
Switching Characteristics (VGS = 10V)
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time VDD = 4... |
| Description |
N-Channel PowerTrench㈢ MOSFET 75V, 80A, 4.5mヘ
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| File Size |
387.06K /
11 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB8874 FDB8874NL
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| OCR Text |
...0 590 345 1.9 56 30 3.0 9.0 6.0 11 72 38 4.0 pF pF pF nC nC nC nC nC nC
Switching Characteristics
tON td(ON) tr td(OFF) tf tOFF Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time
Drain-Source Diode... |
| Description |
30V N-Channel PowerTrench MOSFET
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| File Size |
201.84K /
11 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB8876
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| OCR Text |
...S = 10V, TA = 175oC 1.2 5.7 7.3 11 2.5 8.5 10.3 14 m V
Dynamic Characteristics
CISS COSS CRSS RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10... |
| Description |
N-Channel PowerTrench? MOSFET 30V, 71A, 8.5mOhm
N-Channel PowerTrench㈢ MOSFET 30V, 71A, 8.5mOhm
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| File Size |
252.27K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDB8878
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| OCR Text |
...D = 40A VGS = 10V, RGS = 16 255 11.1 244 14.8 35.3 50 75 383 ns ns ns ns ns ns
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 40A ISD = 3.2A ISD = 40A, d... |
| Description |
N-Channel Logic Level PowerTrench? MOSFET 30V, 48A, 14mOhm
N-Channel Logic Level PowerTrench㈢ MOSFET 30V, 48A, 14mOhm
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| File Size |
215.84K /
6 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDP42AN15A0 FDB42AN15A0 FDP42AN15A0NL
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| OCR Text |
..., ID = 12A VGS = 10V, RGS = 7.5 11 19 27 23 46 74 ns ns ns ns ns ns
Drain-Source Diode Characteristics
VSD trr QRR Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovered Charge ISD = 12A ISD = 6A ISD = 12A, dISD/dt = 100A... |
| Description |
Discrete Automotive N-Channel PowerTrench MOSFET, 150V, 35A, 0.042 ohms @ Vgs = 10 V, TO-263/D2PAK Package
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| File Size |
194.45K /
11 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
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| Part No. |
HUFA75433S3ST HUFA75433S3S
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| OCR Text |
..., ID = 64A VGS = 10V, RGS = 6.2 11 92 39 26 155 98 ns ns ns ns ns ns VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V to 20V VGS = 0V to 10V V = 30V DD VGS = 0V to 2V ID = 64A Ig = 1.0mA 1550 540 150 90 50 3 6 20 117 65 3.9 pF pF pF nC nC nC nC nC
... |
| Description |
N-Channel UltraFET R MOSFETs 60V, 64A, 16mOhm
N-Channel UltraFET MOSFETs 60V/ 64A/ 16m
N-Channel UltraFET MOSFETs 60V, 64A, 16mз 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| File Size |
238.96K /
11 Page |
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it Online |
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Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9V5045S3ST ISL9V5045S3 ISL9V5045S3S
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| OCR Text |
...5C RG = 1K, See T = 150C C Fig. 11 VEC = 24V, See TC = 25C Fig. 11 TC = 150C 420 450 480 V
BVCES
Collector to Emitter Breakdown Voltage
445
475
505
V
BVECS BVGES ICER
Emitter to Collector Breakdown Voltage Gate to Em... |
| Description |
EcoSPARK N-Channel Ignition IGBT
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| File Size |
174.64K /
9 Page |
View
it Online |
Download Datasheet |
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