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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT8024LVFR APT8024B2VFR APT8024B2VFR_04 APT8024B2VFR04
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| OCR Text |
...covery Time (IS = -33A, di/dt = 100a/s) Reverse Recovery Charge (IS = -33A, di/dt = 100a/s) Peak Recovery Current (IS = -33A, di/dt = 100a/s...800v TJ 150C
APT Reserves the right to change, without notice, the specifications and informatio... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
136.78K /
4 Page |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT100GN120J
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| OCR Text |
...er On Voltage (VGE = 15V, I C = 100a, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 100a, Tj = 125C) Collector Cut-off Current (V...800v VGE = 15V I C = 100a VGE = 15V MIN TYP MAX UNIT pF V nC
6500 365 280 9.5 540 50 295 300 50 5... |
| Description |
IGBT
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| File Size |
410.68K /
6 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT8020JFLL
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| OCR Text |
...covery Time (IS = -33A, di/dt = 100a/s) Reverse Recovery Charge (IS = -33A, di/dt = 100a/s) Peak Recovery Current (IS = -33A, di/dt = 100a/s...800v TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
Microsemi reserves the r... |
| Description |
40 A, 800 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
256.97K /
5 Page |
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it Online |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
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| Part No. |
STB6NC80 STB6NC80Z STB6NC80Z-1 STP6NC80ZFP STP6NC80Z P6NC80
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| OCR Text |
...mber 2002
(1)ISD 5.4A, di/dt 100a/s, VDD V(BR)DSS, Tj TJMAX width Limited by maximum temperature allowed 1/13
STP6NC80Z/FP/STP6NC80Z-1
THERMAL DATA
TO-220 / DPAK / IPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Th... |
| Description |
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800v 1.5ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
5.4 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
509.38K /
13 Page |
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it Online |
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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
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| Part No. |
APT8024LVR APT8024B2VR APT8024B2VR_04 APT8024B2VR04
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| OCR Text |
...ery Time (IS = -33A, dl S /dt = 100a/s) Reverse Recovery Charge (IS = -33A, dl S /dt = 100a/s) Peak Diode Recovery
dv/ dt 5
V/ns
THER...800v TJ 150C
APT Reserves the right to change, without notice, the specifications and informatio... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
135.03K /
4 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APTC80H29T3G
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| OCR Text |
...A IS = - 15A VR = 400V diS/dt = 100a/s Tj = 25C Tj = 25C 550 15
1.2 6
V V/ns ns C
www.microsemi.com
2-6
APTC80H29T3G - Rev 1
July, 2006
dv/dt numbers reflect the limitations of the circuit rather than the device itself.... |
| Description |
Full - Bridge Super Junction MOSFET Power Module
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| File Size |
312.44K /
6 Page |
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it Online |
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Price and Availability
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