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  10 12 14 Datasheet PDF File

For 10 12 14 Found Datasheets File :: 274099    Search Time::2.297ms    
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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...O VCEO VEBO IC PT Tj Tstg 9 6 2 10 60 150 -65 to +150 V V V mA mW C C PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter Cauti...12 0.2 11 2.5 4.0 0.4 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 ...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 48.18K  /  8 Page

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ...B = 1 V, IC = 0 VCE = 3 V, IC = 10 mA*1 VCE = 3 V, IC = 10 mA VCB = 3 V, IE = 0, f = 1 MHz*2 VCE = 3 V, IC = 10 mA, f = 2.0 GHz VCE = 3 V, I...12 10 8 6 4 2 0 1 2 5 10 20 50 | S21a |2 - Insertion Power Gain - dB VCE = 3 V f = 2 GHz 12 10 8 6 4...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

File Size 49.94K  /  8 Page

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ...40mA IB2 = -40mA, VCC = 150V 50 10 0.1 0.8 20 0.7 4.0 0.4 *1 min typ max 100 100 300 14.50.5 Unit A A 0.5 1.0 V V MHz ...12 2SC5018 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 Ta=75C 1...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

File Size 35.44K  /  2 Page

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    2SC5022

HITACHI[Hitachi Semiconductor]
Part No. 2SC5022
OCR Text ... EBO hFE VCE (sat) Min -- -- -- 10 -- Typ -- -- -- -- -- Max 10 100 10 -- 5.0 V Unit A A A Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 ...12.0 0.3 4.45 0.3 2.5 14.0 1.0 0.5 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) TO-2...
Description Silicon NPN Triple Diffused

File Size 33.36K  /  7 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ...3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High collector to emitter VCEO High-speed switching Full-pack package with outstan...12 10 8 6 4 2 0 0 100 200 300 400 500 600 700 800 -IB2 VCC IC tW Vclamp Collector ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ...0 0.6 11.0 13.5 14.0 1.1 Max -- 10 1 10 250 1.1 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = ...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ... 0.65 11.0 14.0 14.5 1.1 Max -- 10 1 10 250 1.15 -- -- -- 2.0 pF GHz dB dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE =...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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    2SC5078

HITACHI[Hitachi Semiconductor]
Part No. 2SC5078
OCR Text ... -- -- -- 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 5 mA VCE = 5 V, I...
Description    Silicon NPN Epitaxial

File Size 44.24K  /  7 Page

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    2SC5079

HITACHI[Hitachi Semiconductor]
Part No. 2SC5079
OCR Text ... -- -- -- 120 0.3 12 17 1.6 Max 10 1 10 160 0.8 -- 20 2.5 pF GHz dB dB Unit A mA A Test conditions VCB = 15 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V, IC = 10 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 5 mA VCE = 5 V, I...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 24.20K  /  5 Page

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    2SC5080

HITACHI[Hitachi Semiconductor]
Part No. 2SC5080
OCR Text ... fT PG NF Min 15 -- -- -- 50 -- 10.5 15 -- Typ -- -- -- -- 90 0.4 13.5 18 1.1 Max -- 1 1 10 160 0.75 -- -- 2.0 pF GHz dB dB Unit V A mA A Test conditions I C = 10 A, IE = 0 VCB = 12 V, IE = 0 VCE = 8 V, RBE = VEB = 1.5 V, IC = 0 VCE = 5 V,...
Description Silicon NPN Transistor
Silicon NPN Epitaxial

File Size 47.56K  /  8 Page

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