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1.9625 Datasheet PDF File

For 1.9625 Found Datasheets File :: 7447 Search Time::5.406ms
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				IRF[International Rectifier]
Part No.	IRF7301 IRF7301TR
OCR Text	... MAX .0688 .0098 .018 .0098 .196 .157 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0....
Description	FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.86K / 9 Page	View it Online	Download Datasheet

				International Rectifier http://
Part No.	IRF7303 IRF7303TR
OCR Text	... MAX .0688 .0098 .018 .0098 .196 .157 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0....
Description	Generation V Technology 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
File Size	107.34K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7306 IRF7306TR IRF7306TRPBF
OCR Text	...150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H...
Description	Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.78K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7313 IRF7313TR
OCR Text	...150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H...
Description	30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	542.53K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7314
OCR Text	...150 MAX .0688 .0098 .018 .0098 .196 .157 MILLIMETERS MIN 1.35 0.10 0.36 0.19 4.80 3.81 MAX 1.75 0.25 0.46 0.25 4.98 3.99 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H...
Description	HEXFET Power MOSFET
File Size	138.29K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7413A IRF7413ATR
OCR Text	... MAX .0688 .0098 .018 .0098 .196 .157 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0....
Description	Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm) Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm) 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	112.28K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7416 IRFB7416 IRF7416TR
OCR Text	... MAX .0688 .0098 .018 .0098 .196 .157 A 6 5 H 0.25 (.010) M AM 5 8 E -A- 7 A1 B C D E 1 2 3 4 e 6X K x 45 e1 A e e1 H K L .050 BASIC .025 BASIC .2284 .011 0.16 0 .2440 .019 .050 8 1.27 BASIC 0....
Description	Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm) Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm) -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	112.47K / 9 Page	View it Online	Download Datasheet

				Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
Part No.	MAX9117 MAX9117EXK-T MAX9118EXK-T MAX9119EXK MAX9119EXK-T MAX9120EXK-T MAX9118 MAX9120 MAX9119
OCR Text	... +25C TA = TMIN to TMAX 1.230 1.196 100 1.1 0.2 0.25 1 MAX9117 only, CL = 15pF CL = 15pF MIN TYP 15 40 16 45 1.6 0.2 1.2 1.252 1.274 1.308 s s ms V ppm/ C mVRMS mV/V mV/ nA s MAX UNITS MAX9117-MAX9120 ELECTRICAL CHARACTERISTICS--MAX91...
Description	SC70, 1.8V, Nanopower, Beyond-the-Rails Comparators With/Without Reference SC70封装1.8V的，Nanopower，超越摆幅比较有/无参 "SC70, 1.8V, 350nA Comparator with Open- Drain Output" "SC70, 1.8V, Nanopower, Beyond-the-Rails Comparator With Reference (Open-Drain)" SC70 / 1.8V / Nanopower / Beyond-the-Rails Comparators With/Without Reference
File Size	332.63K / 13 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MGP7N60ED MGP7N60ED_D ON1877 ON1876
OCR Text	...- -- -- -- -- -- -- -- 22 24 64 196 200 71 271 31 24 195 220 350 135 485 27.2 7.0 13.7 -- -- -- -- 340 -- -- -- -- -- -- -- -- -- -- -- -- nC ns ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 610 60 10 -- -- -- ...
Description	Insulated Gate Bipolar Transistor withr Anti-Parallel Diode IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system
File Size	140.16K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MGP7N60E
OCR Text	...- -- -- -- -- -- -- -- 22 24 64 196 0.20 31 24 195 220 0.38 27.2 7.0 13.7 -- -- -- -- 0.34 -- -- -- -- -- -- -- -- mJ nC mJ ns ns (VCE = 25 Vdc, VGE = 0 Vdc, Vdc Vdc f = 1.0 MHz) Cies Coes Cres -- -- -- 610 60 10 -- -- -- pF VCE(on) -- -- -...
Description	Insulated Gate Bipolar Transistor
File Size	118.28K / 6 Page	View it Online	Download Datasheet

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