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  1.931.99 Datasheet PDF File

For 1.931.99 Found Datasheets File :: 417    Search Time::1.579ms    
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    EPA018BV

List of Unclassifed Manufacturers
ETC[ETC]
Part No. EPA018BV
OCR Text ...s=0V Vds=3V, Vgs=0V Vds=3V, Ids=1.0mA Igd=0.5mA Igs=0.5mA -9 -7 MIN 18.0 13.0 TYP 20.0* 20.0* 14.5 13.0 48 0.75 12.5 30 35 55 60 -1.0 -15 -1...931 106.7 3.751 99.4 3.596 91.83 3.428 83.74 3.214 75.82 2.992 68.49 2.794 61.66 2.614 55.19 2.439 4...
Description High Efficiency Heterojunction Power FET

File Size 46.89K  /  2 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF0913A
OCR Text ... output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm * High power gain Gp=13dB(TYP.) @f=1.9GHz * High power added efficiency add=48%(TYP.) @f=1....931 0.969 0.985 0.988 0.986 0.984 0.983 0.977 (mag) 7.877 5.523 4.105 3.265 2.755 2.413 2.150 1.9...
Description L & S BAND GaAs FET [ SMD non - matched ]

File Size 43.80K  /  4 Page

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    FLL21E060IY

Eudyna Devices Inc
Part No. FLL21E060IY
OCR Text ...2 RG=2 Limit <28 <113.6 >-22.1 155 Unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 C) Item Pinch-Off Voltage ...931 -165.59 0.052 -71.77 0.654 113.03 0.242 -156.52 7.194 -174.60 0.053 -80.54 0.599 100.93 0.252 -1...
Description S BAND, GaAs, N-CHANNEL, RF POWER, JFET
L,S-band High Power GaAs FET

File Size 306.31K  /  6 Page

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    FREESCALE[Freescale Semiconductor, Inc]
Part No. MRFG35010N
OCR Text ...lications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station application...931 0.929 150.66 149.88 149.16 148.32 147.41 146.51 145.45 144.41 143.33 142.25 141.15 140.02 138.8...
Description RF Power Field Effect Transistor

File Size 181.50K  /  12 Page

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    S593TRW S593T S593TR

Vishay Intertechnology, Inc.
Vishay Telefunken
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. S593TRW S593T S593TR
OCR Text ...AGC-range D SMD package 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 S593T Marking: 593 Plastic ca...931 Figure 10. Forward transmission coefficient Figure 12. Output reflection coefficient ww...
Description MOSMIC for TV-Tuner Prestage with 5 V Supply Voltage MOSMIC的电视调谐器前置5 V电源电压
From old datasheet system

File Size 155.26K  /  9 Page

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    TRIQUINT[TriQuint Semiconductor]
Part No. TGF2022-12
OCR Text ...r high reliability applications 1.2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA (Under RF Drive, Id rises from 90mA to 30...931 -3.76 -8.663 -114.40 9 -0.642 -175.66 4.729 51.46 -28.991 -4.35 -8.316 -116.05 9.5 -0.639 -176.3...
Description DC - 20 GHz Discrete power pHEMT

File Size 120.38K  /  8 Page

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    MRFG35010NT1

Freescale Semiconductor, Inc
Part No. MRFG35010NT1
OCR Text 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies f...931 0.929 150.66 149.88 149.16 148.32 147.41 146.51 145.45 144.41 143.33 142.25 141.15 140.02 138.8...
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

File Size 163.84K  /  10 Page

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    MRFG35010MT1

Freescale Semiconductor, Inc
Part No. MRFG35010MT1
OCR Text ...lications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station application...931 0.929 150.66 149.88 149.16 148.32 147.41 146.51 145.45 144.41 143.33 142.25 141.15 140.02 138.8...
Description Gallium Arsenide PHEMT RF Power Field Effect Transistor

File Size 183.58K  /  12 Page

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    MGF0913A MGF0913A11

Mitsubishi Electric Semiconductor
Part No. MGF0913A MGF0913A11
OCR Text 1 < high-power gaas fet (small signal gain stage) > mgf0913a l & s band / 1.2w smd non - matched description the mgf0913a gaas...931 -73.16 0.640 150.86 0.175 -163.02 0.708 -124.22 1.01 5.05 9800 0.969 -84.19 0.487 136.98 0.150 -...
Description High-power GaAs FET (small signal gain stage)

File Size 106.86K  /  4 Page

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