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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0913A
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| OCR Text |
... output power Po=31dBm(TYP.) @f=1.9GHz,Pin=18dBm * High power gain Gp=13dB(TYP.) @f=1.9GHz * High power added efficiency add=48%(TYP.) @f=1....931 0.969 0.985 0.988 0.986 0.984 0.983 0.977
(mag) 7.877 5.523 4.105 3.265 2.755 2.413 2.150 1.9... |
| Description |
L & S BAND GaAs FET [ SMD non - matched ]
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| File Size |
43.80K /
4 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRFG35010N
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| OCR Text |
...lications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station application...931 0.929 150.66 149.88 149.16 148.32 147.41 146.51 145.45 144.41 143.33 142.25 141.15 140.02 138.8... |
| Description |
RF Power Field Effect Transistor
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| File Size |
181.50K /
12 Page |
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it Online |
Download Datasheet
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TRIQUINT[TriQuint Semiconductor]
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| Part No. |
TGF2022-12
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| OCR Text |
...r high reliability applications 1.2mm x 0.35 m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 90-150mA (Under RF Drive, Id rises from 90mA to 30...931 -3.76 -8.663 -114.40 9 -0.642 -175.66 4.729 51.46 -28.991 -4.35 -8.316 -116.05 9.5 -0.639 -176.3... |
| Description |
DC - 20 GHz Discrete power pHEMT
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| File Size |
120.38K /
8 Page |
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it Online |
Download Datasheet
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Price and Availability
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