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POLYFET[Polyfet RF Devices]
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| Part No. |
MCDK21
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| OCR Text |
...
7 6 5 4 3 2 1
Efficiency @10W=40%
30 29 28 27
Efficiency @10W=38%
28.0 27.0 0.25 0.50 1.00 2.00 3.00 4.00 6.00 8.00 10.00 15.00 20.00
0
29.5 29.0 28.5
6 5 4 3
15
Efficiency @ 10W=55%
10 5 0
Efficiency @10W=... |
| Description |
Power RF Amplifiers
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| File Size |
32.70K /
2 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC40V3742_04 MGFC40V3742 MGFC40V374204
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| OCR Text |
10W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 ~ 4.2 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliab... |
| Description |
3.7 ~ 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
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| File Size |
204.08K /
2 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC40V5258_04 MGFC40V5258 MGFC40V525804
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| OCR Text |
10W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 - 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high relia... |
| Description |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
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| File Size |
205.03K /
2 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC40V5964_04 MGFC40V5964 MGFC40V596404
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| OCR Text |
10W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC40V3742 is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliab... |
| Description |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
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| File Size |
203.96K /
2 Page |
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it Online |
Download Datasheet |
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http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC40V6472_04 MGFC40V6472 MGFC40V647204
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| OCR Text |
10W INTERNALLY MATCHED GaAs FET DESCRIPTION
The MGFC40V6472A is an internally impedance matched GaAs power FET especially designed for use in 6.4 - 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reli... |
| Description |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
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| File Size |
186.32K /
2 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE1288
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| OCR Text |
10W for Car Radio
Description: The NTE1288 has improved performance with the same pin configuration as the NTE1232. The additional features of the NTE1232; very low number of external components, ease of assembly, space and cost saving, ar... |
| Description |
Integrated Circuit Audio Power Amplifier, 10W for Car Radio
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| File Size |
71.26K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE349
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| OCR Text |
...Characteristics: Output Power = 10W Minimum Gain = 5.2dB Efficiency = 50% Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon NPN Transistor RF Power Amp, Driver
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| File Size |
21.24K /
2 Page |
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it Online |
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Price and Availability
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