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  1-lb Datasheet PDF File

For 1-lb Found Datasheets File :: 12109    Search Time::5.906ms    
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    APT5010JVRU3

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Part No. APT5010JVRU3
OCR Text ...450 3.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test:...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 111.65K  /  7 Page

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    APT5010JVR

Advanced Power Technolo...
Advanced Power Technology, Ltd.
Part No. APT5010JVR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5010JVR UNIT Volts Amps 500 44 176 30 40 450 3...lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test:...
Description POWER MOS V 500V 44A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 71.26K  /  4 Page

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    APT50GF120B2R APT50GF120LR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50GF120B2R APT50GF120LR
OCR Text ...rrent Pulsed Collector Current 1 1 1200 15 20 80 50 160 100 85 390 -55 to 150 300 Volts Amps @ TC = 25C @ TC = 90C 2 IM ...lb*in 0.32 40 10 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = ...
Description The Fast IGBT is a new generation of high voltage power IGBTs. 该快速IGBT是一种高压IGBT的新一代
Fast IGBT 1200V 80A

File Size 37.28K  /  3 Page

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    APT50GF120JRD

ADPOW[Advanced Power Technology]
Part No. APT50GF120JRD
OCR Text ...urrent Total Power Dissipation 1 1 1200 20 75 50 150 100 460 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating an...lb*in N*m Torque 1 Mounting Torque (Mounting = 8-32 or 4mm Machine and Terminals = 4mm Machin...
Description Fast IGBT & FRED 1200V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.

File Size 51.80K  /  4 Page

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    APT50GF60B2RD APT50GF60LRD

ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT50GF60B2RD APT50GF60LRD
OCR Text ...urrent Total Power Dissipation 1 1 600 20 80 50 160 100 300 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating and...lb*in N*m Torque 1 Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1.1 052...
Description Fast IGBT & FRED 600V 80A
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代

File Size 112.47K  /  7 Page

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    APT50GF60BR

ADPOW[Advanced Power Technology]
Part No. APT50GF60BR
OCR Text ...= 90C Pulsed Collector Current 1 @ TC = 25C RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy T...lb*in N*m Torque Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) 1.1 6-20...
Description Fast IGBT 600V 75A
The Fast IGBT is a new generation of high voltage power IGBTs.

File Size 80.83K  /  5 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JVFR
OCR Text ...700 5.6 -55 to 150 300 77 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: ...
Description POWER MOS V 500V 77A 0.050 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JVR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT50M50JVR UNIT Volts Amps 500 77 308 30 40 700 ...lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test:...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 500V 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT8015JVFR APT8015

http://
ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ...700 5.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm

File Size 77.92K  /  4 Page

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JVR
OCR Text ... TC = 25C Pulsed Drain Current 1 APT8015JVR UNIT Volts Amps 800 44 176 30 40 700 5.6 -55 to 150 300 44 50 4 Gate-Source Voltag...lb*in 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test:...
Description POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 75.34K  /  4 Page

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For 1-lb Found Datasheets File :: 12109    Search Time::5.906ms    
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