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  0.6 1.0 1.4 1.8ghz Datasheet PDF File

For 0.6 1.0 1.4 1.8ghz Found Datasheets File :: 916    Search Time::7.688ms    
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    Linear
Part No. LTC4401-2 LTC4401-1
OCR Text ... Transmitter 68 33pF Li-Ion 0.1F 6 VCC LTC4401-1 SHDN 4 SHDN VPCA 5 VPC 900MHz INPUT 1.8ghz INPUT 900MHz OUTPUT RF 1 BAND SELECT 3 DAC PCTL GND 2 PA MODULE 1.8ghz OUTPUT 50 4401 TA01 U sn4401 4401fs U U 1 ...
Description Dual RF Power Controller with 450kHz Loop BW (800MHz to 2GHz)
ThinSOT RF Power Controller with 450kHz Loop BW (800MHz to 2.7GHz)

File Size 184.76K  /  16 Page

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    LTC4402-2 LTC4402-1 LTC4402-1EMS8 LTC4402-2EMS

LINEAR TECHNOLOGY CORP
Linear Technology, Corp.
Part No. LTC4402-2 LTC4402-1 LTC4402-1EMS8 LTC4402-2EMS
OCR Text ...Transmitter LTC4402-2 1 Li-Ion 0.1F BSEL VHOLD SHDN DAC 9 8 7 6 VIN BSEL VHOLD SHDN PCTL RF VPCA VPCB GND GND 10 2 3 4 5 850MHz/ 900MHz RF PA 50 0.4pF 0.05pF 1.8ghz / 1.9GHz RF PA U DIPLEXER 4402 TA01 U U 4402f 1 ...
Description Multiband RF Power Controllers for EDGE/TDMA
Multiband RF Power Controllers for EDGE/TDMA; Package: MSOP; No of Pins: 8; Temperature Range: -40&deg;C to 125&deg;C SPECIALTY TELECOM CIRCUIT, PDSO8

File Size 196.05K  /  12 Page

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    Linear
Part No. LTC4403-2 LTC4403-1
OCR Text ...Transmitter LTC4403-2 1 Li-Ion 0.1F BSEL VHOLD SHDN DAC 9 8 7 6 VIN BSEL VHOLD SHDN PCTL RF VPCA VPCB GND GND 10 2 3 4 5 850MHz/ 900MHz RF PA 50 0.4pF 0.05pF 1.8ghz / 1.9GHz RF PA Information furnished by Linear Technology Corpor...
Description Multiband RF Power Controllers for EDGE/TDMA

File Size 196.02K  /  12 Page

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    ROK101008

ericsson
Part No. ROK101008
OCR Text ... is a Class 2 Bluetooth Module (0 dBm) and is type-approved. Suggested Applications * * * Computers and peripherals Handheld devices and...6 C C V V V V dBm dBm VCC_IO + 0.3 15 15 Recommended Operating Conditions Parameter Symbol...
Description Bluetooth MCM Point to Point

File Size 638.00K  /  18 Page

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    BFP181R Q62702-F1685

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181R Q62702-F1685
OCR Text 0.5mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...6 8 0.21 0.27 0.32 - GHz pF 0.4 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-ba...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 59.01K  /  7 Page

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    BFP181W Q62702-F1501

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181W Q62702-F1501
OCR Text 0.5mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...6 8 0.24 0.27 0.32 - GHz pF 0.4 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-ba...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 59.99K  /  7 Page

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    BFP181 Q62702-F1271

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181 Q62702-F1271
OCR Text 0.5mA to 12mA * fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Markin...6 8 0.21 0.27 0.32 - GHz pF 0.4 dB 1.45 1.8 - IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-ba...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 61.12K  /  7 Page

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    MGF7168C 7168CT_N

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF7168C 7168CT_N
OCR Text ...kage) : our test board(r=4.8, t=0.6mm) MITSUBISHI ELECTRIC (3/12) Mar.'97 MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C UHF BAND ...6.7 w=1.0 1.5pF l=2.0 w=1.0 MGF 7168C 2.5pF Vd2 l=28.6 w=0.5 l=2.7 w=2.2 1000pF Po...
Description UHF BAND GaAs POWER AMPLIFIER
From old datasheet system

File Size 75.54K  /  12 Page

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    SBFP405B

SANYO[Sanyo Semicon Device]
Part No. SBFP405B
OCR Text ...ns unit : mm 0000 [SBFP405B] 0.35 0.2 0.15 0.05 3 0.15 4 0.25 Low noise : NF=1.25dB typ (f=1.8ghz). High cut-off frequency : fT=25G...6 Ratings 15 4.5 1.5 12 55 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics...
Description UHF to C Band Low-Noise Amplifier Osc. Applications

File Size 21.36K  /  2 Page

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    BGB420 BGB420E6327

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BGB420 BGB420E6327
OCR Text ... TSTG Rth JS Value 3.5 30 3 1.5 0.7 120 150 -40 ..+85 -65 ... +150 <270 Unit V mA mA V mA mW C C C K/W Notes: For detailed symbol descrip...6 P-1dB dBm 7 OIP3 CCB CR dBm pF 17 2001-08-10 BGB420 S-Parameter VD=2V, ...
Description Active Biased Transistor
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343
MMIC, LNA

File Size 436.18K  /  10 Page

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For 0.6 1.0 1.4 1.8ghz Found Datasheets File :: 916    Search Time::7.688ms    
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