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  0.18-micron Datasheet PDF File

For 0.18-micron Found Datasheets File :: 4115    Search Time::1.657ms    
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    ATF-13100 ATF-13100-GP3

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-13100 ATF-13100-GP3
OCR Text ...s GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems a...18 GHz frequency range. Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Condi...
Description 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)

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    ATF-13336 ATF-13336-STR ATF-13336-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13336 ATF-13336-STR ATF-13336-TR1
OCR Text ...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dBm Typical P 1 dB at 12 GHz * Cost Effective Ceramic Micro...18.9 -17.6 -17.3 -16.7 -16.5 -16.8 -17.5 -18.3 -18.9 -19.0 -19.2 S12 Mag. .044 .060 .074 .093 .114 ....
Description 2-16 GHz Low Noise Gallium Arsenide FET

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    ATF-13736 ATF-13736-STR ATF-13736-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-13736 ATF-13736-STR ATF-13736-TR1
OCR Text ...2 GHz * High Associated Gain: 9.0 dB Typical at 12 GHz * High Output Power: 17.5 dB Typical at 12 GHz * Cost Effective Ceramic Microstrip Pa...18.0 -17.6 -16.9 -16.4 -16.5 -17.1 -17.6 -18.0 -18.2 -18.4 S12 Mag. .048 .055 .070 .090 .109 .126 .1...
Description 2-16 GHz Low Noise Gallium Arsenide FET

File Size 44.11K  /  4 Page

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    ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786

Electronic Theatre Controls, Inc.
Agilent (Hewlett-Packard)
ETC[ETC]
HP[Agilent(Hewlett-Packard)]
List of Unclassifed Manufacturers
Part No. ATF-13786 ATF-13786-STR ATF-13786-TR1 ATF13786
OCR Text ...S 21 MSG 2 SOURCE 5 0 1 5 FREQUENCY (GHz) 10 20 Insertion Power Gain, Maximum Available Gain, and Maximum Stable ...18 S11 Mag. 0.97 0.88 0.78 0.67 0.57 0.52 0.53 0.57 0.60 0.63 0.64 0.67 0.72 0.76 0.78 0.77 0.74 0.7...
Description Surface Mount Gallium Arsenide FET for Oscillators

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    ATF-21170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21170
OCR Text 0.5- 6 GHz Low Noise Gallium Arsenide FET Technical Data ATF-21170 Features * Low Noise Figure: 0.9 dB Typical at 4 GHz * High Associat...18 ATF-21170 Noise Parameters: VDS = 3 V, IDS = 20 mA Freq. GHz 0.5 1.0 2.0 4.0 8.0 NFO dB 0.4 0...
Description 0.5-6 GHz Low Noise Gallium Arsenide FET

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    ATF-21186 ATF-21186-STR ATF-21186-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text 0.5 - 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-21186 Features * Low Noise Figure: 0.5 dB Typ. @ 2 GHz * High Outpu...18.0 18.0 14.0 8.5 70 80 -3.0 120 120 -1.5 200 -0.8 Max. 0.75 GA dB P1 dB G1 dB dB ...
Description 0.5-6 GHz General Purpose Gallium Arsenide FET

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    ATF-25170

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25170
OCR Text 0.5 - 10 GHz Low Noise Gallium Arsenide FET Technical Data ATF-25170 Features * Low Noise Figure: 0.8 dB Typical at 4 GHz * High Associ...18 15 16 14 GA 20 MSG GA (dB) GA 2.0 12 9 12 10 1.5 GAIN (dB) 15 MAG ...
Description 0.5-10 GHz Low Noise Gallium Arsenide FET

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    ATF-25570

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-25570
OCR Text 0.5 - 10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25570 Features * High Output Power: 20.5 dBm Typical P1 dB at 4 GH...18 -1 -19 -36 -48 -68 dB -28.9 -26.2 -22.5 -20.9 -19.8 -18.8 -18.3 -17.5 -17.0 -16.7 -16.4 -16.1 -15...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

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    ATF-25735

HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
Part No. ATF-25735
OCR Text 0.5-10 GHz General Purpose Gallium Arsenide FET Technical Data ATF-25735 Features * High Output Power: 19.0 Bm Typical P 1 dB at 4 GHz ...18 .07 .09 .15 .18 .21 .26 Ang. -12 -20 -41 -61 -81 -97 -112 -161 107 76 53 24 -5 Typical Scatter...
Description 0.5-10 GHz General Purpose Gallium Arsenide FET

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    ATF-26836 ATF-26836-STR ATF-26836-TR1

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-26836 ATF-26836-STR ATF-26836-TR1
OCR Text 0 dBm Typical P 1 dB at 12 GHz * High Gain: 9.0 dB Typical GSS at 12 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packagi...18.0 35 50 -1.5 90 -0.5 f = 12.0 GHz dBm mmho mA V Note: 1. Refer to PACKAGING section "Tape-a...
Description 2-16 GHz General Purpose Gallium Arsenide FET

File Size 42.07K  /  4 Page

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For 0.18-micron Found Datasheets File :: 4115    Search Time::1.657ms    
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