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  0-66 Datasheet PDF File

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    IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V

IDT[Integrated Device Technology]
Part No. IDT71V632SA4PF IDT71V632SA4PFI IDT71V632 IDT71V632S5PFI IDT71V632S5PF IDT71V632S6PF IDT71V632S6PF8 IDT71V632S6PFG IDT71V632S6PFG8 IDT71V632S6PFI IDT71V632S6PFI8 IDT71V632S5PF8 IDT71V632S5PFG IDT71V632S5PFG8 IDT71V632S5PFI8 IDT71V632S7PF IDT71V632S7PF8 IDT71V632S7PFG IDT71V632S7PFI IDT71V632S7PFI8 IDT71V632S8PF IDT71V632S8PF8
OCR Text ...ite enables. BW1 controls I/O(7:0), BW2 controls I/O(15:8), etc. Any active byte write causes all outputs to be disabled. ADSP LOW disables ...66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 NC I/O15 I/O14 VDDQ VSSQ I/O13 I/O12 I/O11 I/O10 ...
Description 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter/ Single Cycle Deselect
3.3V 64K x 32 Pipelined
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect
64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter Single Cycle Deselect

File Size 271.54K  /  19 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ...RF1010ZS Max. 94 66 75 360 140 0.90 20 TO-262 IRF1010ZL Units A Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V ID @ TC = 2...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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    IRF1302L IRF1302S

IRF[International Rectifier]
Part No. IRF1302L IRF1302S
OCR Text ...ount) Typ. --- --- Max. 0.74 40 Units C/W www.irf.com 1 07/16/02 IRF1302S/IRF1302L Electrical Characteristics @ TJ = ...66 100 ns TJ = 25C, IF = 104A --- 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (t...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=174A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=174A)

File Size 225.99K  /  11 Page

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    IRF1302

IRF[International Rectifier]
Part No. IRF1302
OCR Text ...mbient (PCB mount) Typ. --- 0.50 --- Max. 0.65 --- 62 Units C/W www.irf.com 1 10/31/02 IRF1302 Electrical Characteris...66 100 ns TJ = 25C, IF = 104A --- 130 200 nC di/dt = 100A/s Intrinsic turn-on time is negligible (tu...
Description Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A?)
Power MOSFET(Vdss=20V, Rds(on)=4.0mohm, Id=180A)
Power MOSFET(Vdss=20V/ Rds(on)=4.0mohm/ Id=180A)

File Size 516.95K  /  9 Page

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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ... 590 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resis...66 nC VDS = 44V 93 VGS = 10V --- VDD = 38V --- ID = 110A ns --- RG = 1.1 --- VGS = 10V D Between le...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 153.38K  /  11 Page

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ... 560 See Fig.12a, 12b, 15, 16 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resis...66 nC VDS = 44V 93 VGS = 10V --- VDD = 38V --- ID = 110A ns --- RG = 1.1 --- VGS = 10V D Between le...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

File Size 114.28K  /  9 Page

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    IRF2804 IRF2804L IRF2804S

IRF[International Rectifier]
Part No. IRF2804 IRF2804L IRF2804S
OCR Text ...nt, steady state)j Typ. --- 0.50 --- --- Max. 0.45 --- 62 40 Units C/W HEXFET(R) is a registered trademark of International R...66 13 120 130 130 4.5 7.5 6450 1690 840 5350 1520 2210 --- --- 2.0 2.3 4.0 --- 20 250 200 -200 240 6...
Description 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
40V Single N-Channel HEXFET Power MOSFET in a TO-262 package
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 273.77K  /  12 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...l D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...66 39 63 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C,...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...d D VDSS = -55V RDS(on) = 0.06 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize adva...66 39 63 4.5 7.5 1200 520 250 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...age Current* V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 Typ Max Units V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VDS = VGS,...66 15.3 1.2 +/- 100 14 17 nA nC 5.2 18.4 VDS = 16V, VGS = 0 Schottky Diode & Body Di...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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