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Nexperia
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| Part No. |
PMZ130UNE
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| OCR Text |
...cs r dson drain-source on-state resistance v gs = 4.5 v; i d = 1.8 a; t j = 25 c - 120 150 m [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and mounting pad for drain 1 cm 2 . downloaded from: http:///
? nexperia... |
| Description |
20 V, N-channel Trench MOSFET
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| File Size |
314.36K /
14 Page |
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Ecliptek, Corp.
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| Part No. |
EMS43GHA-125.000M
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| OCR Text |
..., condition g, 30,000g moisture resistance mil-std-883, method 1004 moisture sensitivity level j-std-020, msl 1 resistance to soldering heat mil-std-202, method 210, condition k resistance to solvents mil-std-202, method 215 solderability m... |
| Description |
OSCILLATORS 100PPM -40 85 3.3V 4 125.000MHZ TS CMOS 2X2.5 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 125 MHz, LVCMOS OUTPUT
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| File Size |
203.27K /
5 Page |
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it Online |
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Panasonic
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| Part No. |
ECQUAAF154TA ECQUAAF334TA
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| OCR Text |
...ction installed) high humidity resistance (thb test : 85 c, 85 %, 240 v.ac, 1000 h ) high thermal shock resistance-40 ? 851000 cycles flame-retardant plastic case and non-combustible resin aec-q200 compliant rohs compliant interferen... |
| Description |
Film Capacitors (Automotive, Industrial, Infrastructure) ECQUA (For automotive)
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| File Size |
257.12K /
3 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AON6234
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| OCR Text |
...e v =10v, v =20v, r =1 , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge gate source charge gate drain charge total gate charge switching parameters turn-on delaytime v gs =10v, v ds =20v, i d =20a electrical characteristics ... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
344.13K /
6 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AON6144
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| OCR Text |
...eters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 a, v gs =0v r ds(on) static drain-source on-resistance t f 3 ns t rr 17 ns q rr 45 nc this product has been d... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
319.72K /
6 Page |
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it Online |
Download Datasheet |
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TOSHIBA
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| Part No. |
TK3A65DA
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| OCR Text |
...ons ? low drain-source on-resistance: r ds (on) = 2.3 (typ.) ? high forward transfer admittance: |y fs | = 2.2 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 650 v) ? enhancement mode: v th = 2.4 to 4.4 v (v d... |
| Description |
Power MOSFET (N-ch 500V<VDSS≤700V)
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| File Size |
201.17K /
6 Page |
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it Online |
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Skyworks Solutions
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| Part No. |
CDF7623-203 CDB7619 CDB7619-203
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| OCR Text |
... materials result in low series resistance along with a narrow spread of capacitance values for close impedance control. p-type silicon is used to obtain superior 1/f noise characteristics. n-type silicon is also available. packaged dio... |
| Description |
N-Type Detector Schottky Diode X Band
P-Type Detector Schottky Diode K Band
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| File Size |
158.60K /
9 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF288L
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| OCR Text |
...r ds(on) static drain-source on-resistance v gs =6v, i d =20a to220/to220f electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 a, v gs =0v forward tran... |
| Description |
Single MV MOSFETs (40V - 400V)
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| File Size |
376.85K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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