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Alpha & Omega Semiconductor
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| Part No. |
AONS32314
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| OCR Text |
...ation b 10 t c =100c p d 30 25 gate-source voltage pulsed drain current c 26 parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 4.0 55 5.0 v a absolute maximum rati... |
| Description |
Single LV MOSFETs (12V - 30V)
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| File Size |
231.85K /
6 Page |
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Qorvo
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| Part No. |
QPM1002
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| OCR Text |
...cent current (rxidq) 20 ma rx gate control (rxvg) 2 - 2.5 v tx drain voltage (txvd) 25 v tx drain quiescent current (txidq) 110 ma tx gate voltage (txvg) 2 - 2.5 v control voltage (txsw / rxsw) transmit: -28v / 0 v; recei... |
| Description |
8.5 - 10.5 GHz GaN Transmit / Receive Module
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| File Size |
1,090.36K /
22 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF42S60
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| OCR Text |
...s drain current t c =25c i d 30 gate-source voltage the aotf42s60 have been fabricated using the advanced mos tm high voltage process that is designed to deliver high levels of performance and robustnes s in switching applications. by p... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
282.90K /
6 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF12T50P
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| OCR Text |
...20f pb free tube i d a 12 48 72 gate-source voltage maximum junction-to-ambient a,d maximum junction-to-case a mosfet dv/dt ruggedness peak diode recovery dv/dt c w mj 480 12* thermal characteristics parameter 300 pulsed drain current c 8... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
411.08K /
6 Page |
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ST Microelectronics
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| Part No. |
STU2N80K5
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| OCR Text |
...m (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these devices are n-channel power mosfets developed using supermesh? 5 technology. this revolutionary,... |
| Description |
N-channel 800 V, 3.5 Ohm typ., 2 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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| File Size |
1,597.49K /
23 Page |
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SGS Thomson Microelectronics
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| Part No. |
STU26NM50
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| OCR Text |
...ity n low input capacitance and gate charge n low gate input resistance description the mdmesh ? is a new revolutionary mosfet technology that associates the multiple drain pro- cess with the company's powermesh ? horizontal layout. the res... |
| Description |
N-CHANNEL 500V 0.10 OHM 26A TO-247/MAX220/MAX220I ZENER-PROTECTED MDMESH POWER MOSFET
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| File Size |
134.15K /
11 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF4N60
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| OCR Text |
...epetitive avalanche energy c v gate-source voltage pulsed drain current c continuous drain current t c =25c i d 4 4* 2.7 16 2.5 94 t c =25c thermal characteristics the aot4n60 & aotf4n60 & aotf4n60l have been fabricated using an advanced... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
359.99K /
6 Page |
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Nexperia
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| Part No. |
74LV02APW
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| OCR Text |
gate rev. 1 19 december 2018 product data sheet 1. general description the 74lv02a is a quad 2-input nor gate. inputs are overvoltage tolerant. this feature allows the use of these devices as translators in mixe d voltage environments. sc... |
| Description |
Quad 2-input NOR gate
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| File Size |
185.64K /
10 Page |
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it Online |
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