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Sharp Corporation
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| Part No. |
LH28F320BFB-PTTL60
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| OCR Text |
...ates the status of the internal wsm (write state machine). when low, wsm is performing an internal operation (block erase, full chip erase, (page buffer) program or otp program). ry/by#-high z indicates that the wsm is ready for new command... |
| Description |
32M (x16) Flash Memory
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| File Size |
696.35K /
37 Page |
 View
it Online |
Download Datasheet
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Sharp Corporation
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| Part No. |
LH28F320BFB-PBTL60
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| OCR Text |
...ates the status of the internal wsm (write state machine). when low, wsm is performing an internal operation (block erase, full chip erase, (page buffer) program or otp program). ry/by#-high z indicates that the wsm is ready for new command... |
| Description |
32M (x16) Flash Memory
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| File Size |
696.46K /
37 Page |
View
it Online |
Download Datasheet |
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Macronix International Co., Ltd.
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| Part No. |
MX28F640C3TXAC-90 MX28F640C3TTC-12 MX28F640C3TTI-12 MX28F640C3TXAI-12
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| OCR Text |
...n internal write state machine (wsm) automatically executes the algo- rithms and timings necessary for erase, full chip erase, word write and sector lock/unlock configuration opera- tions. a sector erase operation erases one of the device's... |
| Description |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PBGA48
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| File Size |
657.19K /
44 Page |
View
it Online |
Download Datasheet |
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Mitsubishi
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| Part No. |
M6MGB_T160S2BVP M6MGB E99003_A
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| OCR Text |
...WE# F-WP# F-RP# BYTE#
CUI
wsm INPUT/OUTPUT BUFFERS
F-RY/BY# DQ15/A-1DQ14DQ13DQ12 DQ3DQ2DQ1DQ0
2Mb SRAM
ADDRESS INPUT BUFFER SENSE AMP. A-1 A0
DATA INPUTS/OUTPUTS
ROW DECODER
SENSE AMP.
262144 WORD x 8 BITS or 131072... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
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| File Size |
255.86K /
30 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP E99004_A
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| OCR Text |
...WE# F-WP# F-RP# BYTE#
CUI
wsm INPUT/OUTPUT BUFFERS
F-RY/BY# DQ15/A-1 DQ14DQ13DQ12 DQ3DQ2DQ1DQ0
4Mb SRAM
ADDRESS INPUT BUFFER SENSE AMP. A-1 A0
DATA INPUTS/OUTPUTS
ROW DECODER
SENSE AMP.
524288WORD x 8 BITS or 262144... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
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| File Size |
254.76K /
30 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M6MGB_T162S2BVP M6MGB E99005_A M6MGB162S2BVP M6MGT162S2BVP
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| OCR Text |
...# OE# WE# F-WP# F-RP#
CUI
wsm INPUT/OUTPUT BUFFERS
READY/BUSY OUTPUT
F-RY/BY# DQ15DQ14DQ13DQ12 DQ3DQ2DQ1DQ0
2Mb SRAM
S-A-1 ADDRESS INPUT BUFFER SENSE AMP.
DATA INPUTS/OUTPUTS
ROW DECODER
A0
262144 WORD x 8 BITS
... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
From old datasheet system
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| File Size |
233.16K /
29 Page |
View
it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP E99006_A
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| OCR Text |
...# OE# WE# F-WP# F-RP#
CUI
wsm INPUT/OUTPUT BUFFERS
READY/BUSY OUTPUT
F-RY/BY# DQ15 DQ14DQ13DQ12 DQ3DQ2DQ1DQ0
4Mb SRAM
S-A-1 ADDRESS INPUT BUFFER SENSE AMP.
DATA INPUTS/OUTPUTS
ROW DECODER
A0
524288 WORD x 8 BITS
... |
| Description |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
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| File Size |
237.13K /
29 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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