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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
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| OCR Text |
...55 to 150 260 UNITS V A A A V V w w/oC oC oC
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....20a, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24 TYP 1.8 1.6 5.5 8.6 142 182 15 ... |
| Description |
CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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| File Size |
162.96K /
9 Page |
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it Online |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FX20aSJ-2 FS4KM-12
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| OCR Text |
...55 ~ +150
Unit V V A A A A A w C C g Jan.1999
Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 50H Source cur...20a, dis/dt = 100A/s
PERFORMANCE CURVES
POwER DISSIPATION DERATING CURVE 50 POwER DISSIPATION PD... |
| Description |
HIGH-SPEED SwITCHING USE
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| File Size |
44.40K /
4 Page |
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it Online |
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Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FX20aSJ-2
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| OCR Text |
...55 ~ +150
Unit V V A A A A A w C C g Jan.1999
Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 50H Source cur...20a, dis/dt = 100A/s
PERFORMANCE CURVES
POwER DISSIPATION DERATING CURVE 50 POwER DISSIPATION PD... |
| Description |
MITSUBISHI Pch POwER MOSFET HIGH-SPEED SwITCHING USE
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| File Size |
49.60K /
4 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XXF
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| OCR Text |
...tage class unit ma v m s m c c/w c/w limits symbol i rrm v fm t rr q rr r th (j-c) r th (c-f) parameter repetitive reverse current forward...20a, instantaneous meas. i fm =20a, di/dt=C50a/ m s, v r =300/600v* 1 , t j =150 c junction to cas... |
| Description |
FAST RECOVERY DIODE MODULES HIGH SPEED SwITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
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| File Size |
53.32K /
3 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
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| Part No. |
RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XXS
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| OCR Text |
...80 unit ma v m s m c m s m c c/w c/w limits parameter repetitive reverse current forward voltage reverse recovery time reverse recovery ch...20a v r =150/300v q rr mitsubishi fast recovery diode modules rm20da/ca/c1a-xxs medium power, high f... |
| Description |
FAST RECOVERY DIODE MODULES MEDIUM POwER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POwER/ HIGH FREQUENCY USE INSULATED TYPE
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| File Size |
53.06K /
3 Page |
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it Online |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FX20KMJ-3
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| OCR Text |
...
4.5 0.2
Unit V V A A A A A w C C V g Jan.1999
Drain current (Pulsed) Avalanche drain current (Pulsed) L = 30H Source current Source ...20a, dis/dt = 100A/s
PERFORMANCE CURVES
POwER DISSIPATION DERATING CURVE 40 POwER DISSIPATION PD... |
| Description |
HIGH-SPEED SwITCHING USE
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| File Size |
49.21K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FL20KM-5A
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| OCR Text |
... ~ +150 2000 2.0 Unit V V A A A w C C V g
Aug. 1999
4.5 0.2
MITSUBISHI POwER MOSFET
on. ange. ificati h l spec bject to c a fina su...20a, VGS = 0V, dis/dt = -100A/s
PERFORMANCE CURVES
POwER DISSIPATION DERATING CURVE 50
POwER DI... |
| Description |
Power MOSFETs: FL Series
HIGH-SPEED SwITCHING USE Nch POwER MOSFET
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| File Size |
62.99K /
4 Page |
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it Online |
Download Datasheet |
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