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  vdsx Datasheet PDF File

For vdsx Found Datasheets File :: 283    Search Time::1.453ms    
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    Sanyo
Part No. 2SK2076
OCR Text ...ture Storage Temperature Symbol vdsx VGDS IG ID PD Tj Tstg Conditions 1 : Source 2 : Drain 3 : Gate SANYO : CP 0.8 1.1 Ratings 30 -30 10 5 150 150 -55 to +150 Unit V V mA mA mW C C Electrical Characteristics at Ta = 25C Para...
Description N-Channel Junction Silicon FET

File Size 113.16K  /  4 Page

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    Sony
Part No. SGM2014AM
OCR Text ... 25C) * Drain to source voltage vdsx 12 * Gate 1 to source voltage VG1S -5 * Gate 2 to source voltage VG2S -5 * Drain current ID 55 * Allowable power dissipation PD 150 * Channel temperature Tch 150 * Storage temperature Tstg -55 to +150 ...
Description GaAs N-channel Dual Gate MES FET
From old datasheet system

File Size 47.88K  /  5 Page

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    Sony
Part No. SGM2014AN
OCR Text ... 25C) * Drain to source voltage vdsx 12 * Gate 1 to source voltage VG1S -5 * Gate 2 to source voltage VG2S -5 * Drain current ID 55 * Allowable power dissipation PD 100 * Channel temperature Tch 125 * Storage temperature Tstg -55 to +150 M-...
Description GaAs N-channel Dual Gate MES FET
From old datasheet system

File Size 53.43K  /  5 Page

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    Sony
Part No. SGM2016AN
OCR Text ... 25C) * Drain to source voltage vdsx 12 * Gate 1 to source voltage VG1S -5 * Gate 2 to source voltage VG2S -5 * Drain current ID 55 * Allowable power dissipation PD 100 * Channel temperature Tch 125 * Storage temperature Tstg -55 to +150 M-...
Description GaAs N-channel Dual-Gate MES FET
From old datasheet system

File Size 52.52K  /  5 Page

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    Sony
Part No. SGM2016AP SGM2016AM SGM2016AM_AP
OCR Text ... 25C) * Drain to source voltage vdsx 12 * Gate 1 to source voltage VG1S -5 * Gate 2 to source voltage VG2S -5 * Drain current ID 55 * Allowable power dissipation PD 150 * Channel temperature Tch 150 * Storage temperature Tstg -55 to +150 SG...
Description GaAs N-channel Dual-Gate MES FET
From old datasheet system

File Size 76.42K  /  5 Page

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    panasonic
Part No. XN01871
OCR Text ...ture Storage temperature Symbol vdsx VGDO ID IG PT Tch Tstg (Ta=25C) Ratings 30 -30 20 10 300 150 -55 to +150 Unit V V mA mA mW C C 1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Drain (Tr2) 4 : Source 5 : Drain (Tr1) EIAJ : SC-74A Mini5-G1 Pa...
Description
File Size 78.55K  /  3 Page

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    Matsshita / Panasonic
Part No. XN1871 XN01871
OCR Text ...ture Storage temperature Symbol vdsx VGDO ID IG PT Tch Tstg +0.2 (Ta=25C) Ratings 30 -30 20 10 300 150 -55 to +150 Unit V V mA mA mW C C 1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Drain (Tr2) 0 to 0.1 0.1 to 0.3 4 : Source 5 : Dra...
Description Composite Transistors

File Size 58.95K  /  3 Page

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    hitachi
Part No. 2SK1056
OCR Text ...o source voltage 2SK1056 Symbol vdsx Ratings 120 Unit V -------------------------------------------------------------------------------------- ---------- 2SK1057 ------ 140 ---------- 2SK1058 Gate to source voltage Drain current...
Description Silicon NPN Triple Diffused
From old datasheet system

File Size 39.89K  /  5 Page

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    Sanyo
Part No. 2SK2170 1022
OCR Text ...ture Storage Temperature Symbol vdsx VGDS IG ID PD Tj Tstg Conditions 1 : Source 2 : Drain 3 : Gate SANYO : SMCP Ratings 30 -30 10 20 100 150 -55 to +150 Unit V V mA mA mW C C Electrical Characteristics at Ta = 25C Parameter Ga...
Description N-Channel Junction Silicon FET Impedance Converter Applications
From old datasheet system

File Size 120.08K  /  4 Page

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    Sanyo
Part No. 2SK2218 1025
OCR Text ...ture Storage Temperature Symbol vdsx VGDS IG ID PD Tj Tstg Mounted on ceramic board (250mm2x 0.8mm) Conditions 1 : Source 2 : Gate 3 : Drain SANYO : PCP (Bottom View) Ratings 15 -15 10 100 400 800 150 -55 to +150 Unit V V mA mA mW ...
Description High-Frequency Low-Noise Amplifier Applications
From old datasheet system
N-Channel Junction Silicon FET

File Size 212.16K  /  6 Page

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For vdsx Found Datasheets File :: 283    Search Time::1.453ms    
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