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  vdgr Datasheet PDF File

For vdgr Found Datasheets File :: 5153    Search Time::1.062ms    
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    PHX7N60E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHX7N60E
OCR Text ...(IEC 134) SYMBOL PARAMETER VDSS vdgr VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITI...
Description PowerMOS transistors Avalanche energy rated

File Size 75.58K  /  8 Page

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    BUK7608-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7608-55
OCR Text ...mum System (IEC 134) SYMBOL VDS vdgr VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & ...
Description TrenchMOS transistor Standard level FET

File Size 65.96K  /  8 Page

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    BUK9608-55

NXP Semiconductors
Philips Semiconductors
Part No. BUK9608-55
OCR Text ...mum System (IEC 134) SYMBOL VDS vdgr VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & ...
Description TrenchMOS transistor Logic level FET

File Size 68.11K  /  8 Page

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    HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75343S3ST HUF75343S3NL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HUF75343S3 HUF75343S3S HUF75343G3 HUF75343P3 HUF75343S3ST HUF75343S3NL
OCR Text ...te 1) . . . . . . . . . . . . . vdgr Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Dra...
Description 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape &amp; Reel 75 A, 55 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

File Size 228.29K  /  10 Page

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    IRF640 IRF640S

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. IRF640 IRF640S
OCR Text ...(IEC 134) SYMBOL PARAMETER VDSS vdgr VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITI...
Description N-channel TrenchMOS transistor(N娌?? TrenchMOS ?朵?绠?
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 93.86K  /  9 Page

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    MRF134

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF134
OCR Text ...e Temperature Range Symbol VDSS vdgr VGS ID PD Tstg Value 65 65 40 0.9 17.5 0.1 - 65 to +150 Unit Vdc Vdc Vdc Adc Watts W/C C THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction to Case Symbol RJC Value 10 Unit C/W Handling ...
Description N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 205.26K  /  10 Page

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    MRF136Y

MACOM[Tyco Electronics]
Part No. MRF136Y
OCR Text ...unction Temperature Symbol VDSS vdgr VGS ID PD Tstg TJ Value Val e 65 65 40 5.0 100 0.571 -65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 1.75...
Description 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL MOS BROADBAND RF POWER FET

File Size 217.54K  /  9 Page

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    MRF136

MOTOROLA[Motorola, Inc]
Part No. MRF136
OCR Text ...unction Temperature Symbol VDSS vdgr VGS ID PD Tstg TJ 2.5 55 0.314 Value MRF136 65 65 40 5.0 100 0.571 MRF136Y 65 65 Unit Vdc Vdc Vdc Adc Watts W/C C C - 65 to +150 200 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Jun...
Description N-CHANNEL MOS BROADBAND RF POWER FETs

File Size 284.68K  /  12 Page

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    MRF137

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF137
OCR Text ...unction Temperature Symbol VDSS vdgr VGS ID PD Tstg TJ Value 65 65 40 5.0 100 0.571 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C MAXIMUM RATINGS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symb...
Description N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 196.56K  /  10 Page

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    MRF158

MOTOROLA[Motorola, Inc]
Part No. MRF158
OCR Text ...unction Temperature Symbol VDSS vdgr VGS ID PD Tstg TJ Symbol RJC Value 65 65 40 0.5 8.0 45 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts mW/C C C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Max 13.2 Unit C...
Description TMOS BROADBAND RF POWER FET

File Size 94.07K  /  6 Page

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For vdgr Found Datasheets File :: 5153    Search Time::1.062ms    
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