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SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
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| Part No. |
2SA2044 2SC5710 2SA2044FA 2SC5710TP-FA
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| OCR Text |
...V(BR)EBO ton tstg tf Conditions vcb=(--)30V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(-)500mA VCE=(--)10V, IC=(--)500mA vcb=(--)10V, f=1MHz IC=(--)4A, IB=(-)200mA IC=(--)2.5A, IB=(-)50mA IC=(--)2.5A, IB=(-)50mA IC=(--)10A, IE=0 IC=(--)1mA, RBE... |
| Description |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 9A I(C) | TO-252VAR
DC / DC Converter Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP / NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors DC/DC Converter Applications
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| File Size |
37.49K /
5 Page |
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it Online |
Download Datasheet
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New Jersey Semi-Conduct...
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| Part No. |
BFR93A
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| OCR Text |
... figure noise figure conditions vcb= 5v; ie= 0 lc= 30ma ; vce= 5v lc= 30ma ; vce= 5v; f= 500mhz ie= 0 ; vcb= 5v; f= 1mhz ie= 0 ; vcb= 5v; f= 1mhz lc=5ma;vce=8v;f=1ghz lc= 5ma ; vce= 8v; f= 2ghz min 40 4.5 typ. 6 0.7 0.6 1.9 3 max 0.05 unit ... |
| Description |
Silicon NPN RF Transistor
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| File Size |
66.04K /
2 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
BFR93AW
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| OCR Text |
... figure noise figure conditions vcb= 5v; ie= 0 lc= 30ma ; vce= 5v lc= 30ma ; vce= 5v; f= 500mhz le=0;vcb=5v;f=1mhz |e=0;vcb=5v;f=1mhz lc=5ma;vce=8v;f=1ghz lc= 5ma ; vce= 8v; f= 2ghz min 40 4 typ. 5 0.7 0.6 1.5 2.1 max 0.05 unit ua ghz pf pf... |
| Description |
Silicon NPN RF Transistor
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| File Size |
66.22K /
2 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
BSX45
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| OCR Text |
...noise figure conditions ie = 0; vcb = 60 v le = 0;vcb = 60v;tamb=150c ie = 0; vcb = 80 v le = 0;vcb = 80v;tamb=150 lc = 0; veb = 5 v lc = 100ua;vce = 1 v lc = 100ma; vce = 1v lc = 500 ma; vce = 1 v lc = 1 a; vce = 1 v lc= 1 a; ib= 100ma lc ... |
| Description |
NPN medium power transistors
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| File Size |
124.52K /
4 Page |
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it Online |
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New Jersey Semi-Conduct...
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| Part No. |
2N4854 2N4854U
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| OCR Text |
...c collector-base cutoff current vcb = 60 vdc collector-base cutoff current vcb = 50 vdc 2n3838 2n4854. u emitter-base cutoff current veb = 5.0 vdc veb = 3.0 vdc v(br)ceo icbo(l) icboo iebo 40 10 50 10 10 10 dc (oadc tjadc jjadc r)adc nj sem... |
| Description |
Devices
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| File Size |
90.88K /
2 Page |
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New Jersey Semi-Conduct...
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| Part No. |
MMBT918 PN918
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| OCR Text |
...1.0 ua, ie = 0 le = 10na, lc =0 vcb = 15v, ie=0 vcb = 15v, ta=150c 15 30 3.0 0.01 1.0 v v v ma ha on characteristics hfe vce(sat) vee(sat) dc current gain collector-emitter saturation voltage base-emitter saturation voltage lc = 3.0 rna, vc... |
| Description |
NPN RF Transistor
NPN RF Transistor
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| File Size |
72.70K /
2 Page |
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it Online |
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Continental Device Indi...
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| Part No. |
2N2369
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| OCR Text |
... collector-cut off current icbo vcb=20v, ie=0 <400 - na vcb=20v, ie=0, ta=150 deg c <30 - ua ices vce=20v, vbe=0 - <400 na base current ib vce=20v, vbe=0 - <400 na collector emitter saturation volta... |
| Description |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
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| File Size |
89.80K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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