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CM612 HB1129C 78395 SB358W 016D70TF 25N120 2SA20181 20FIB
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  vbe Datasheet PDF File

For vbe Found Datasheets File :: 20496    Search Time::1.187ms    
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    New Jersey Semi-Conductor P...
Part No. BUX10
OCR Text ...= 0) collector-emitter voltage (vbe = - 1.5v) collector-emitter voltage (le = 0) emitter-base voltage (ic = 0) collector current collector peak current (tp = 10 rns) base current total power dissipation at tcase < 25 c storage temperature m...
Description HIGH POWER NPN SILICON TRANSISTOR

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...) CEO hFE (1) hFE (2) VCE (sat) vbe (sat) Cob tr tstg tf Test Condition VCB = -20 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.15 A VCE = -2 V, IC = -0.5 A IC = -0.5 A, IB = -17 mA IC = -0.5 A, IB = -17 mA VCB = -10 ...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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    2SA2070

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2070
OCR Text ...) CEO hFE (1) hFE (2) VCE (sat) vbe (sat) Cob tr tstg tf Test Condition VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.1 A VCE = -2 V, IC = -0.3 A IC = -0.3 A, IB = -0.01 mA IC = -0.3 A, IB = -0.01 mA VCB = -...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 131.46K  /  5 Page

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    New Jersey Semi-Conductor P...
Part No. 2N6577 2N6576
OCR Text ...o bvceo bvceo vce(sat) vce(sat) vbe(sat) vbe(sat) nfe nfe hfe hfe test conditions vcb=rated vcbo vcev=rated vceo, vbe(off)=1 .5v vcer= r?t?l vceo. rbe=10k"- tc=1 50c vce= rated vceo ic=200ma (2n6576) lc=200ma (2n6577) lc=200ma (2n6578) lc=1...
Description NPN SILICON POWER DARLINGTON TRANSISTOR

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    New Jersey Semi-Conductor P...
Part No. BFQ43S
OCR Text ...134) collector-emitter voltage (vbe " 0) peak value vcesm collector-emitter voltage (open base) vceo emitter-base voltage (open collector) vebo collector current (average) 'c(av) collector current (peak value); f> 1 mhz icm total power diss...
Description V.H.F. POWER TRANSISTORS

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    HN2C26FS

Toshiba Semiconductor
Part No. HN2C26FS
OCR Text ....2 0.3 0.5 2.0 1.5 1.0 0.7 ib - vbe 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 base current ib ( a) common emitter vce = 6v 25 -25 vce(sat) - ic 0.01 0.1 1 0.1 1 10 100 common emitter ic/ib = 10 25 -25 vbe(sat) - ic 0.1 1 10 0.1 1 10 ...
Description Frequency General-Purpose Amplifier Applications

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    New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
Part No. BD778 BD776
OCR Text ... " 100 c) emimr cutoff currant (vbe-s.ovdt, ic"0) on characteristics dc currant g*n llc - 2.0 ade. vce - 3.0 vdcl colltctor-emimr saturation voltagf (lc- 1.5 adc, le- bmadc) b?* emilltr siturition voltigi dc - 1.5 adc. ib - 6 madct bot-emit...
Description PLASTIC DARUNGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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    New Jersey Semi-Conductor P...
New Jersey Semiconductors
New Jersey Semi-Conduct...
Part No. MJH16010 MJH16012 MJIB010 MJI6012
OCR Text ...= 15 adc. vce= 50 vdc) vce(sat) vbe(sat) ife - - 5.0 0.5 1.0 1.0 ~ 2.s 3.0 3.0 1.5 1.5 ? vdc vdc ? dynamic characteristics output capacitance |vcb= lovdc. ie=0. f,?,= 10khz) cob ? ? 400 pf switching characteristics retittlve load delay time...
Description Power Transistors

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    New Jersey Semi-Conductor P...
Part No. MJH16006A
OCR Text ...utoff current (vcev = 1000 vdc, vbe(off) = 1 -5 vdc) (vcev = 1000 vdc, vse(off) = 1 -5 vdc, tc = 100c) collector cutoff current <vce = 1000 vdc, rbe = so n, tc = iooc) emitter cutoff current (veb = 6 vdc, ic = 0) vceo(sus) !cev icer iebo 50...
Description NPN Silicon Power Transistor

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    2SA2097

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2097
OCR Text ...) CEO hFE (1) hFE (2) VCE (sat) vbe (sat) tr tstg tf Test Condition VCB = -50 V, IE = 0 VEB = -7 V, IC = 0 IC = -10 mA, IB = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -1.6 A IC = -1.6 A, IB = -53 mA IC = -1.6 A, IB = -53 mA See Figure 1 ci...
Description High-Speed Swtching Applications DC-DC Converter Applications

File Size 119.11K  /  5 Page

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