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    Ramtron International Corp.
Part No. FM4005-S
OCR Text v e s : f m 3 1 2 7 2 ( 5 v ) o r f m 3 1 l 2 7 2 ( 3 v ) pre-production this is a product in pre-production phase of development. device ramtron international corporation characterization is complete and ramtron does not ex...
Description
File Size 246.94K  /  23 Page

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    ELM33417CA-S

ELM Technology Corporation
Part No. ELM33417CA-S
OCR Text ...te drain-source voltage vds -30 v gate-source voltage vgs 20 v continuous drain current ta=25c id -4.5 a ta=70c -3.5 pulsed drain current id...s uses advanced trench technology to provide excellent rds(on), low gate charge and low gate ...
Description Single P-channel MOSFET

File Size 424.92K  /  4 Page

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    S-AU27AL S-AU27AM S-AU27AH TOSHIBACORPORATION-S-AU27AL

TOSHIBA[Toshiba Semiconductor]
Part No. S-AU27AL S-AU27AM S-AU27AH TOSHIBACORPORATION-S-AU27AL
OCR Text ... 10 600 40 -30~100 -40~110 UNIT V V V A mW W C C JEDEC EIAJ TOSHIBA Weight: 35g -- -- 5-53Q ELECTRICAL CHARACTERISTICS (Tc = 25C) ...S-AU27AL,S-AU27AM,S-AU27AH CAUTION * This product has intersetting cap. Please pay attention for e...
Description    25W FM RF POWER AMPLIFIER MODULE

File Size 133.64K  /  3 Page

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    Nell Semiconductor Co., Ltd
Part No. 12PT06AI-S 12FT08G-S 12FT08G-T 12FT06F-S 12FT06F-T
OCR Text ...ures symbol value unit i t(rms) v /v drm rrm i gt 12 a v m a 0.2 15 to 600 to 1000 description (180conductionangle) 4 1 averageonstatecurren...s h c u r r e n t l i m i t i n g c i r c u i t s , c a p a c i t i v e ignition and voltage regulat...
Description Sensitive and Standard SCRs, 12A

File Size 1,112.57K  /  7 Page

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    IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR
OCR Text .... (1.6mm) from case ) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Gre...S Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/T...
Description TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCES和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条)
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (Standard) Discrete IGBT in a D2-Pak package

File Size 150.68K  /  9 Page

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    Panasonic Industrial Solutions
Part No. CPS1027-S CPS1027-J
OCR Text ... operates in systems with a 3.0 v to 5.0 v digital power supply and a 5.0 v analog supply. n low-power 0.9 m cmos technology, fully static ...s dsp16a and dsp1610/1616/1617/1618 digital signal processors. 2 description the agere csp1027 is a...
Description Telecommunication IC 通信集成电路

File Size 581.70K  /  64 Page

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    ELM16408EA-S

ELM Technology Corporation
Part No. ELM16408EA-S
OCR Text ...ote drain-source voltage vds 20 v gate-source voltage vgs 12 v continuous drain current ta=25c id 8.8 a 1 ta=70c 7.0 pulsed drain current ...s uses advanced trench technology to provide excellent rds(on), low gate charge and ope...
Description Single N-channel MOSFET

File Size 358.32K  /  4 Page

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    HTC2000-S HTC1000-S HTC3000-S

LEM
Part No. HTC2000-S HTC1000-S HTC3000-S
OCR Text ...0-s 3000 3300 htc 3000-s v c supply voltage (3 %) 15 v i c current consumption < 20 ma r is insulation resistance @ 500 vdc > 500 m w v out output voltage @ i pn, r l =2k w, t a =25c, 10 v r out output internal resistance ...
Description    Current Transducers HTC 1000~3000-S
Current Transducers HTC 1000~3000-S 电流转换器宏0003000 -

File Size 130.44K  /  2 Page

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