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ADPOW[Advanced Power Technology]
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| Part No. |
APT10035JLL_03 APT10035JLL APT10035JLL03
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| OCR Text |
...eak Diode Recovery
dv/ dt 5
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v
TJ =+150C TJ =+25C 10
8
vDS=800v
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC)... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
89.74K /
5 Page |
 View
it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10035JFLL_03 APT10035JFLL APT10035JFLL03
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| OCR Text |
...HARACTERISTICS
UNIT Amps volts v/ns ns
25 100 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (vGS ...500v
TJ =+150C TJ =+25C 10
8
vDS=800v
4
50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC)... |
| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
90.44K /
5 Page |
View
it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10030L2vR_04 APT10030L2vR APT10030L2vR04
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| OCR Text |
v(R) MOSFET
Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the ...500v ID = 33A @ 25C vGS = 15v vDD = 500v ID = 33A @ 25C RG = 0.6 MIN TYP MAX UNIT
10600 1000 500 ... |
| Description |
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
128.30K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10030L2vFR_04 APT10030L2vFR APT10030L2vFR04
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| OCR Text |
v(R) FREDFET
Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the...500v ID = 33A @ 25C vGS = 15v vDD = 500v ID = 33A @ 25C RG = 0.6 MIN TYP MAX UNIT
10600 1000 500 ... |
| Description |
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
129.11K /
4 Page |
View
it Online |
Download Datasheet |
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Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
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| OCR Text |
...eak Diode Recovery
dv/ dt 5
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v
vDS = 800v
10
4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, G... |
| Description |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 v, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
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| File Size |
100.91K /
5 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03
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| OCR Text |
...HARACTERISTICS
UNIT Amps volts v/ns ns
38 152 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (vGS ...500v
vDS = 800v
10
4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, G... |
| Description |
38 A, 1000 v, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
101.61K /
5 Page |
View
it Online |
Download Datasheet |
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Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10026JLL_03 APT10026JLL APT10026JLL03
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| OCR Text |
...iode Recovery
dv/ dt 5
Q
v/ns
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient MIN TYP ...500v
vDS = 800v
10
4
100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, G... |
| Description |
30 A, 1000 v, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
107.27K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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