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				eupec GmbH
Part No.	FZ1200R12KE3
OCR Text	...reichen einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir fur diese Falle - die gemeinsame Durchfuhrung eines Risiko- und Qualitatsassessments; - den Abschluss von speziellen Qualitatssicherungsvereinbarungen; - die gem...
Description	Hochstzulassige Werte / maximum rated values IGBT Power Module
File Size	200.26K / 9 Page	View it Online	Download Datasheet

				TRIQUINT[TriQuint Semiconductor]
Part No.	TGA4522-EPU
OCR Text	...GHz Bias: 6 V @ 400 mA Idq 0.25 um 3MI pHEMT Technology Chip Dimensions 2.00 x 1.45 x 0.10 mm (0.079 x 0.057 x 0.004 in) Primary Applicat...TM TSTG 1/ 2/ 3/ 4/ PARAMETER Drain Voltage Gate Voltage Range Drain Current Gate Current Input ...
Description	33 to 47 GHz Wide Band Driver Amplifier 33 - 47 GHz Wide Band Driver Amplifier
File Size	164.54K / 10 Page	View it Online	Download Datasheet

				TriQuint Semiconductor, Inc.
Part No.	TGA1073B-SCC
OCR Text	...d Performance * * * * * * 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB (7V) -38 dBc IMR3 @ 18 dBm SCL ...TM TSTG 1/ 2/ 3/ 4/ 2/ 3/ Total current for all stages. These ratings apply to each individual...
Description	27 32 GHz 0.7 Watt Power Amplifier 27- 32 GHz 0.7 Watt Power Amplifier 27000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
File Size	433.21K / 7 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA1135B-SCC
OCR Text	um pHEMT Technology 14 dB Nominal Gain at 23GHz 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 480 mA On-...TM T STG 2/ 3/ 1/ 2/ 3/ 4/ Total current for all stages. These ratings apply to each indivi...
Description	18-27 GHz 1W Power Amplifier
File Size	1,098.50K / 10 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA1141-EPU
OCR Text	um pHEMT Technology 17 dB Nominal Gain 31 dBm Pout @ P1dB, Psat 33dBm @ 6V , 34dBm @7V Bias 6 - 7V @ Iq = 880 mA, Id = 1.3 A at Psat Chip Di...TM TSTG Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temp...
Description	33-36 GHz 2W Power Amplifier
File Size	164.89K / 9 Page	View it Online	Download Datasheet

				TRIQUINT[TriQuint Semiconductor]
Part No.	TGC1411-EPU
OCR Text	...ign using TriQuint' proven 0.25 um s Power pHEMT process to support a variety of communication system applications including satellite. The ...TM TSTG 1/ 2/ Parameter Positive Supply Voltage Positive Supply Current Power Dissipation Input Cont...
Description	0.3 - 10 GHz Downconverter
File Size	369.77K / 5 Page	View it Online	Download Datasheet

				TriQuint Semiconductor
Part No.	TGA4513
OCR Text	...urn Loss Bias: 6 V, 840 mA 0.25 um 3MI MMW pHEMT Technology Chip Dimensions: 2.8 x 2.2 x 0.1 mm (0.110 x 0.087 x 0.004) in Measured Data ...TM TSTG 1/ 2/ 3/ 4/ 5/ 2/ 4/ 5/ 6/ These ratings represent the maximum operable values for thi...
Description	27 - 31 GHz 2W Balanced Power Amplifier
File Size	219.61K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGB420UD2
OCR Text	... V G E = 15 V 4.5 Ma xim um DC C ollector C urre nt (A ) V G E = 15 V 80 s P UL S E W ID TH I C = 1 5A V C E , C o llec to r-to-E m itter V oltage (V ) 4.0 12 3.5 9 3.0 6 2.5 I C = 7.5A 2.0 3 I ...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V, @Vge=15V,Ic=7.5A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=500V @Vge=15VIc=7.5A)
File Size	385.53K / 8 Page	View it Online	Download Datasheet

				IRF International Rectifier
Part No.	IRGPC50MD2
OCR Text	...m itter V oltag e (V) M axim um D C C ollector C urrent (A ) V GE = 1 5V 8 0 s P U L S E W ID TH 50 I C = 7 0A 3.0 40 2.5 30 2.0 I C = 3 5A 20 10 1.5 IC = 17A 0 25 50 75 100 125 150 1.0 -60 -...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(VCES=600V, @VGE=15V, IC=35A)
File Size	391.03K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGPC50UD2
OCR Text	...80 s P UL S E W ID TH M axim um DC C ollector C urrent (A) 2.5 I C = 5 4A 40 30 2.0 I C = 27 A 1.5 20 10 I C = 14 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V @Vge=15V Ic=27A) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=27A)
File Size	393.31K / 8 Page	View it Online	Download Datasheet

For um-tm Found Datasheets File :: 544 Search Time::1.344ms
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