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HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
C7883G C7883 C7883-20
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| OCR Text |
...able A8226
Connector on board: ufs-16B-01 Input/output signal connector: BNC (Start, CLK, Trigger, EOS, Data Video) Power supply: lose wire cable Cable length: 1 m
A8226
Note) When making a simple in-circuit evaluation of NMOS linear... |
| Description |
Driver circuit for NMOS linear image sensor
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| File Size |
210.52K /
4 Page |
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it Online |
Download Datasheet
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Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
C7884G-01 C7884 C7884-01 C7884-20 C7884-21 C7884-G
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| OCR Text |
...able A8226
Connector on board: ufs-16B-01 Input/output signal connector: BNC (Start, CLK, Trigger, EOS, Data Video) Power supply: lose wire cable Cable length: 1 m
A8226
Note) When making a simple in-circuit evaluation of NMOS linear... |
| Description |
Driver circuit for NMOS linear image sensor
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| File Size |
226.09K /
5 Page |
View
it Online |
Download Datasheet |
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HAMAMATSU[Hamamatsu Corporation]
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| Part No. |
C7885G C7885 C7885-20
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| OCR Text |
...able A8226
Connector on board: ufs-16B-01 Input/output signal connector: BNC (Start, CLK, Trigger, EOS, Data Video) Power supply: lose wire cable Cable length: 1 m
A8226
Note) When making a simple in-circuit evaluation of NMOS linear... |
| Description |
Driver circuit for NMOS linear image sensor
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| File Size |
217.11K /
4 Page |
View
it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT15J121
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| OCR Text |
...ement-mode Ultra Fast Switching(ufs :Operating frequency up to 150kHz(Reference) :tr=0.03s(typ.) High speed :tf=0.08s(typ.) :Eon=0.23mJ(typ.) Low switching loss :Eoff=0.18mJ(typ.)
Maximum Ratings (Ta=25)
Characteristic Collector-emitt... |
| Description |
Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT
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| File Size |
101.81K /
2 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGT1Y40N60B3D
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| OCR Text |
ufs Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFE... |
| Description |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264
70A, 600V, ufs Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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| File Size |
122.85K /
9 Page |
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it Online |
Download Datasheet |
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HARRIS[Harris Corporation]
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| Part No. |
HGTD3N60C3S HGTD3N60C3
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| OCR Text |
ufs Series N-Channel IGBTs
Description
The HGTD3N60C3 and HGTD3N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and... |
| Description |
6A, 600V, ufs Series N-Channel IGBTs
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| File Size |
227.56K /
9 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTG12N60C3D
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| OCR Text |
ufs Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET ... |
| Description |
From old datasheet system
24A, 600V, ufs SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
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| File Size |
123.26K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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