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  STK11C48-N35 Datasheet PDF File

For STK11C48-N35 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    2N3500

Seme LAB
Part No. 2N3500
Description Bipolar NPN Device in a Hermetically sealed TO39

File Size 10.32K  /  1 Page

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HUA FENG CIRCUIT





    2N3583

Seme LAB
Part No. 2N3583
Description Bipolar NPN Device in a Hermetically sealed TO66

File Size 11.09K  /  1 Page

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Part No. 2N3597
Description TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | TO-210AE

File Size 56.58K  /  1 Page

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    2N3583

Inchange Semiconductor Company Limited
Part No. 2N3583
Description isc Silicon NPN Power Transistor

File Size 131.75K  /  2 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. 2N3562
Description SCR, V(DRM) = 200V TO 299.9V

File Size 98.95K  /  1 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. 2N3564
Description NPN SILICON TRASISTOR

File Size 120.97K  /  1 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. 2N3565
Description SI NPN LO-PWR BJT

File Size 90.03K  /  1 Page

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    ADPOW[Advanced Power Technology]
Part No. TAN350
Description high power COMMON BASE bipolar transistor.

File Size 707.44K  /  4 Page

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    TAN350

Electronic Theatre Controls, Inc.
Microsemi, Corp.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. TAN350
Description 350 Watts, 50 Volts, Pulsed Avionics 960 1215 MHz 350瓦,50伏特,脉冲航空电601215兆赫
TACAN 960-1215 MHz, Class C, Common Base, Pulsed; P(out) (W): 350; P(in) (W): 70; Gain (dB): 7; Vcc (V): 50; Pulse Width (&#181;sec): 10; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
350 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz

File Size 115.59K  /  3 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. 1N3515
Description REF/REG DIODE, 250MW < P(D) s 400MW

File Size 53.59K  /  1 Page

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