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NANYA TECHNOLOGY CORP
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| Part No. |
NT5DS64M8AF-6K
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| OCR Text |
...are used to select the bank and row to be accessed. the address bits registered coincident with the read or write command are used to select the bank and the starting column locati on for the burst access. the ddr sdram provides for prog... |
| Description |
64M X 8 DDR DRAM, 0.7 ns, PBGA60
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| File Size |
2,293.16K /
76 Page |
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it Online |
Download Datasheet
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FUJITSU LTD
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| Part No. |
MB81F161622C-70FN
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| OCR Text |
...as column address strobe 17 ras row address strobe 18 cs chip select 19 a 11 (ba) bank select 20 ap auto precharge enable 20, 21, 22, 23, 24, 27, 28, 29, 30, 31, 32 a 0 to a 10 address input ?row: a 0 to a 10 ? column: a 0 to a 7 34 ck... |
| Description |
1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
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| File Size |
390.83K /
45 Page |
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it Online |
Download Datasheet |
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| Part No. |
KMM366S824CT-GH
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| OCR Text |
...0 ~ cs3 chip select input ras row address strobe cas column address strobe we write enable dqm0 ~ 7 dqm v dd power supply (3.3v) v ss ground *v ref power supply for reference sda serial data i/o scl serial clock sa0 ~ 2 address in eeprom ... |
| Description |
8M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
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| File Size |
163.28K /
11 Page |
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it Online |
Download Datasheet |
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Price and Availability
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