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  rg-195 u Datasheet PDF File

For rg-195 u Found Datasheets File :: 625    Search Time::1.969ms    
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    HGTP5N120CN HGT1S5N120CNS FN4596

INTERSIL[Intersil Corporation]
Part No. HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text ... 2. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = ...
Description From old datasheet system
25A 1200V NPT Series N-Channel IGBT
25A, 1200V, NPT Series N-Channel IGBT
25A/ 1200V/ NPT Series N-Channel IGBT

File Size 79.50K  /  7 Page

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    HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A

INTERSIL[Intersil Corporation]
Part No. HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text ... 2. VCE(PK) = 840V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC...
Description From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

File Size 88.17K  /  7 Page

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    IXTN21N100 IXTK21N100

IXYS[IXYS Corporation]
Part No. IXTN21N100 IXTK21N100
OCR Text ...S = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External), 50 100 40 250 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 100 TO-264 AA TO-264 AA m...195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033...
Description Discrete MOSFETs: Standard N-channel Types
High Voltage MegaMOSTMFETs

File Size 136.10K  /  4 Page

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    STP10NA40 STP10NA40FI 3039

STMICROELECTRONICS[STMicroelectronics]
Part No. STP10NA40 STP10NA40FI 3039
OCR Text ... (V GS = 0) Drain-gate Voltage (RG S = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c ...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

File Size 202.39K  /  10 Page

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    STP10NK70Z STP10NK70ZFP

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP10NK70Z STP10NK70ZFP
OCR Text ...ditions VDD = 350 V, ID = 4.5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 560V, ID = 9 A, VGS = 10V Min. Typ. 22 19 64 12 33 ...195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.0...
Description N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220/TO-220FP ZENER-PROTECTED SuPERMESH POWER MOSFET
N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 700V - 0.75ohm - 8.6A TO-220/TO-220FP Zener-Protected SuperMESH?Power MOSFET

File Size 382.71K  /  10 Page

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    STP11NC40 STP11NC40FP

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STP11NC40 STP11NC40FP
OCR Text ...onditions VDD = 200 V, ID = 5 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 320V, ID = 10 A, VGS = 10V Min. Typ. 15 18 32.5 6 1...195 0.094 0.393 0.630 1.204 0.417 0.141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.0...
Description 9.5 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESH?II Power MOSFET
N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESHII Power MOSFET
N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESH⑩II Power MOSFET
N-CHANNEL 400V 0.44 OHM 9.5A TO-220 / TO-220FP POWERMESH II POWER MOSFET

File Size 387.23K  /  10 Page

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    STP12NM50 STP12NM50FP STB12NM50-1

ST Microelectronics
STMicroelectronics
SGS Thomson Microelectronics
Part No. STP12NM50 STP12NM50FP STB12NM50-1
OCR Text ...Symbol g fs (1) C iss Coss Crss Rg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0...
Description N-CHANNEL MOSFET with FAST DIODE
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh Power MOSFET
N-CHANNEL 500V - 0.3W - 12A TO-220/TO-220FP/I PAK MDmesh]Power MOSFET
N-CHANNEL 500V 0.3OHM 12A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET

File Size 114.33K  /  10 Page

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    STP5NA50 STP5NA50FI 3064

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NA50 STP5NA50FI 3064
OCR Text ... (V GS = 0) Drain-gate Voltage (RG S = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c ...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0...
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system

File Size 201.17K  /  10 Page

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    STP5NA60 STP5NA60FI 3065

ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NA60 STP5NA60FI 3065
OCR Text ... (V GS = 0) Drain-gate Voltage (RG S = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c ...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0...
Description N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system

File Size 204.53K  /  10 Page

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    STP5NA80 STP5NA80FI 3066

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STP5NA80 STP5NA80FI 3066
OCR Text ... (V GS = 0) Drain-gate Voltage (RG S = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c ...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0...
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system

File Size 205.41K  /  10 Page

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For rg-195 u Found Datasheets File :: 625    Search Time::1.969ms    
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