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rg-187 u Datasheet PDF File

For rg-187 u Found Datasheets File :: 1111 Search Time::1.687ms
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				ADPOW[Advanced Power Technology]
Part No.	APT10021JLL
OCR Text	... = 15V 254 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C ns MIN TYP MAX uNIT Amps Volts ns C 37 148 1.3 (Body ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.69K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10026JFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 30 120 1.3 18 310 625 ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.42K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10026JLL
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 30 120 1.3 ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.68K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10043 APT10043JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 7500 675 310 320 38 169 14 10 51 11 9000 945 465 480 57 250 28 20 75 22 ns ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 1000V 22A 0.430 Ohm
File Size	73.54K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10M07JVR APT10M07
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 18000 6800 2800 700 130 300 25 60 80 20 21600 9500 4200 1050 195 435 50 120 ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	POWER MOS V 100V 225A 0.007 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	72.90K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHB130N03LT
OCR Text	...D = 15 V; ID = 25 A; VGS = 5 V; RG = 5 Resistive load Measured from tab to centre of die Measured from drain lead solder point to centre of die Measured from source lead solder point to source bond pad December 1997 2 Rev 1.200 ...
Description	TrenchMOS transistor Logic level FET
File Size	62.75K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP130N03LT PHB130N03LT
OCR Text	...D = 15 V; ID = 25 A; VGS = 5 V; RG = 5 Resistive load Measured tab to centre of die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to source bond pad VGS = 0 V; VDS = 25 V; f = 1 MHz January 199...
Description	TrenchMOS transistor Logic level FET
File Size	50.94K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10045JFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 21 84 1.3 18 300 600 ...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.41K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10045JLL
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6W MIN TYP MAX uNIT 4335 720 129 159 19 101 10 7 32 8 ns nC pF Gate-Source Charge Gate-Drain (...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.46K / 2 Page	View it Online	Download Datasheet

For rg-187 u Found Datasheets File :: 1111 Search Time::1.687ms
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