rg-178 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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rg-178 Datasheet PDF File

For rg-178 Found Datasheets File :: 1061 Search Time::1.985ms
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				Sanyo Semicon Device
Part No.	LC75372E
OCR Text	...kHz, all settings flat overall, Rg = 1 k VIN = 1 Vrms, f = 1 kHz, main volume at - VIN = 1 Vrms, f = 1 kHz, main volume at -, INMUTE All set...178.5 pF and C2 = 0.18 F. Figure 1 No. 5330-13/18 LC75372E Control System Timing and Data F...
Description	CMOS LSI Electronic Volume Control for Car Stereo Systems
File Size	478.35K / 18 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10078BFLL APT10078SFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 14 56 1.3 18 200 350 ...178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BS...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10078BLL APT10078SLL
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6W MIN TYP MAX UNIT 2510 430 73 93 11 59 10 6 30 8.6 ns nC pF Gate-Source Charge Gate-Drain ("...178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BS...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.53K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT10086BLC APT10086SLC
OCR Text	... RM VA FO AD IN VDD = 0.5 VDSS RG = 1.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 13 52 (VGS...178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BS...
Description	POWER MOS VI 1000V 13A 0.860 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10086SVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX UNIT 3700 350 180 185 16 90 12 10 43 10 4440 490 270 275 24 135 24 20 65 20 ns n...178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082) 1.27 (.050) 1.40 (.055) 1.22 (.048)...
Description	POWER MOS V 1000V 13A 0.860 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	68.97K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10090BFLL APT10090SFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX UNIT Amps Volts V/ns ns 12 48 1.3 18 200 350 ...178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BS...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.43K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10090BLL APT10090SLL
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 1.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX UNIT Amps Volts ns C 12 48 1.3 ...178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BS...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.98K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLMS1503
OCR Text	...com IRLMS1503 QG VDS VGS RG 10V RD 10V QGS VG QGD D.U.T. + - VDD Charge Pulse Width 1 s Duty Factor 0.1 % Fi...178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2...
Description	30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
File Size	175.92K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLMS1902 IRLMS1902TR
OCR Text	...DD = 10V 11 ID = 2.2A ns 12 RG = 6.0 4.0 RD = 4.4, See Fig. 10 300 VGS = 0V 120 pF VDS = 15V 50 = 1.0MHz, See Fig. 5 Source...178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2...
Description	20V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
File Size	183.10K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc ON Semi
Part No.	MMDF6N02HD MMDF6N02HD_D ON2197 ON2196
OCR Text	...= 3 5 Ad VGS = 4.0 Vdc, 4 0 Vdc RG = 10 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse R...178 pF (Cpk 2.0) (3) VGS(th) 0.5 -- (Cpk 2.0) (3) RDS(on) -- -- gFS 7.0 28 42 8.6 35 49 -- Mhos 0....
Description	DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS Medium Power Surface Mount Products From old datasheet system
File Size	189.43K / 10 Page	View it Online	Download Datasheet

For rg-178 Found Datasheets File :: 1061 Search Time::1.985ms
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