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rg-141 u Datasheet PDF File

For rg-141 u Found Datasheets File :: 196 Search Time::1.359ms
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				Eudyna Devices Inc
Part No.	FLL21E135IX
OCR Text	... VDS IGF IGR T ch Condition RG=2 RG=2 Limit <28 <529 >-48 155 unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc...141.3 - 142.2 - 143.1 - 143.9 - 144.6 - 145.3 - 145.9 - 146.3 - 146.9 - 147.1 - 147.6 - 150.6 - 152....
Description	L,S-band High Power GaAs FET
File Size	296.01K / 7 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MAC15SD MAC15SM MAC15SN
OCR Text	...v/dt (V/mS) 600V 100 800V 80 60 RG - MT1 = 510W 60 100 200 300 400 500 600 700 800 RGK, GATE-MT1 RESISTANCE (OHMS) 900 1000 50 400 450 500 5...141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King ...
Description
File Size	690.13K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE85600 NE85639R NE856 NE85618 NE85619 NE85630 NE85632 NE85633 NE85634 NE85635 NE85639 NE85639R-T1
OCR Text	... VCE = 10 V VO = 100 dBV/50 RG = RL = 50 -60 IM2 3 -50 2 -40 IM2 f = 90 + 100 MHz IM3 f = 2 X 200-190 MHz 1 1 2 3 5 7 10...141 Rn/50 0.13 0.19 0.23 0.47 NE85619 TYPICAL NOISE PARAMETERS (TA = 25C) FREQ. (MHz) NFOPT (dB)...
Description	NPN silicon high frequency transistor. NECs NPN SILICON HIGH FREQuENCY TRANSISTOR
File Size	253.82K / 25 Page	View it Online	Download Datasheet

				Motorola, Inc MOTOROLA[Motorola Inc]
Part No.	MGP4N60E
OCR Text	...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOuCHTONE 602-244-6609 ASIA/PACIFIC...
Description	Insulated Gate Bipolar Transistor
File Size	120.60K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STB9NK70Z STB9NK70ZFP
OCR Text	...onditions VDD = 350 V, ID = 4 A RG = 4.7 VGS = 10 V (Resistive Load see, Figure 3) VDD = 560V, I D = 8 A, VGS = 10V Min. Typ. 22 17 48 10 27...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description	N-Channel Enhancement Mode MOSFET
File Size	249.45K / 14 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp.
Part No.	FCA47N60 FCH47N60
OCR Text	..., VGS = 0V VDD = 300V, ID = 47A RG = 25 -----5900 3200 250 160 420 8000 4200 ---pF pF pF pF pF Switching Characteristics Turn-On Delay Ti...141 1.4 --- A A V ns C 1. Repetitive Rating: Pulse width limited by maximum junction temperatu...
Description	600V N-Channel MOSFET 47 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 600V N-Channel MOSFET
File Size	661.38K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPV362MF
OCR Text	... VCC=80%(VCES), VGE=20V, L=10H, RG= 50, ( See fig. 19 ) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-142 To Order Previous Datasheet Index Next Data Sheet CPV362MF 8 2.5 6 1.9 Total O utp...
Description	IGBT SIP MODuLE Fast IGBT
File Size	415.21K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF5NJZ48
OCR Text	... VDS = 44V VDD = 28V, ID = 22A, RG = 5.1 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On...
Description	55V Single N-Channel Hi-Rel MOSFET in a SMD-0.5 package POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.016ohm, Id=22A*)
File Size	114.58K / 7 Page	View it Online	Download Datasheet

				Motorola, Inc
Part No.	MAC8SD MAC8SN MAC8SM
OCR Text	...t (V/mS) TJ = 100C 110 110C 130 RG - MT1 = 510W 100 700 750 800 Figure 9.0 Typical Exponential Static dv/dt Versus Gate-MT1 R...141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King ...
Description	TRIACS 8 AMPERES RMS 400 THRu 800 VOLTS
File Size	753.59K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MHPM7A30E60DC3
OCR Text	...1100T3 MC33153 MBRS1100T3 120 W RG(on) 20 W RG(off) MBRS1100T3 -20 -10 0 10 20 30 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488 6 Motorola MHPM7A30E60DC...
Description	Hybrid Power Module
File Size	165.08K / 6 Page	View it Online	Download Datasheet

For rg-141 u Found Datasheets File :: 196 Search Time::1.359ms
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