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  rg-140 u Datasheet PDF File

For rg-140 u Found Datasheets File :: 6361    Search Time::1.204ms    
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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...- VDD = 10V --- ID = 30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 10V --- = 1.0MHz Avalanche Characteristics Symbol EA...140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Tran...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ...P 100 VDS L DRIVER RG 20V VGS D.u.T IAS tp + V - DD A 0.01 50 Fig 12a. unclamped Inductive Test Circuit V(BR)DSS tp 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 12c. Maximum A...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...4V VGS = 10V VDD = 28V ID = 75A RG = 2.6 VGS = 10V e e e Between lead, 6mm (0.25in.) from package and center of die contact VGS = ...140 160 180 ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Tra...
Description AuTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...140 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AuTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...- VDD = 38V --- ID = 82A ns --- RG = 2.5 --- VGS = 10V T D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S...140 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T Intrinsic turn-on time is negligible (turn...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...VDD = -28V --- ID = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS ...140 160 180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fi...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...DD = -28V --- I D = -38A ns --- RG = 2.5 --- RD = 0.72, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die...140 160 180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction T em perature (C ) ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS =...140 160 180 A -V G S , G ate -to-Source Volta ge (V ) T J , J unc tion T em perature (C ) ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...VDD = -28V --- ID = -16A ns --- RG = 6.8 --- RD = 1.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die ...140 160 180 A -V G S , G ate -to-Source Volta ge (V ) T J , Junction T em perature (C ) ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... VDD = 50V --- ID = 9.0A ns --- RG = 12 --- RD = 5.5, See Fig. 10 Between lead, 7.5 --- nH and center of die contact 640 --- VGS = 0V 160 -...140 160 180 A V G S , G ate-to -So urce Voltag e (V) T J , Junction T em perature (C ) F...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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