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MICROSEMI
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| Part No. |
2N3585
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| OCR Text |
...ltage Collector-Emitter Voltage rbe = 50 Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Lead Temperature 1/16" from Case for 10 Sec. Power Dissipatio... |
| Description |
5 Amp, 500V, High Voltage NPN Silicon Power Transistors
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| File Size |
63.02K /
3 Page |
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it Online |
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ASI[Advanced Semiconductor]
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| Part No. |
TPV8100
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| OCR Text |
...VCER PDISS TJ TSTG JC 12 A 40 V rbe = 10 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W
O O O O O O
1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (COMMON)
CHARACTERISTICS
SYMBOL
BVCER BVCBO ... |
| Description |
NPN SILICON RF POWER TRANSISTOR
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| File Size |
23.78K /
1 Page |
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it Online |
Download Datasheet
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ASI[Advanced Semiconductor]
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| Part No. |
TPV8100B
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| OCR Text |
...VCER PDISS TJ TSTG JC 12 A 40 V rbe = 10 215 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 0.8 C/W
O O O O O O
1 = COLLECTOR #1 2 = COLLECTOR #2 3 = BASE #1 4 = BASE #2 5 = EMITTER CASE (COMMON)
CHARACTERISTICS
SYMBOL
BVCER BVCBO ... |
| Description |
NPN SILICON RF POWER TRANSISTOR
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| File Size |
23.74K /
1 Page |
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it Online |
Download Datasheet
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-F1306 BF720 BF722 Q62702-F1238
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| OCR Text |
...er breakdown voltage IC = 10 A, rbe = 2.7 k BF 720 Collector-base breakdown voltage IC = 10 A, IB = 0 BF 720 BF 722 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current VCB = 200 V, IE = 0 Collector-emitter cutoff ... |
| Description |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) NPN硅高压晶体管在电视机的视频输出级(适合开关电源和高击穿电压) From old datasheet system
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| File Size |
135.34K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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