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  p n-channel Datasheet PDF File

For p n-channel Found Datasheets File :: 68559    Search Time::3.281ms    
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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...ol Showing the Integral Reverse p-N Junction Diode G D MIN - TYp - MAX 8.1 32 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 8.1...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ n-channel power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, n-channel power MOSFETs 6.5 A, 275 V, 0.68 ohm, n-channel, Si, pOWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...ol Showing the Integral Reverse p-N Junction Diode G D MIN - TYp - MAX 14 56 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovered Charge Forward Turn-On Time NOTES: VSD trr QRR tON...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, n-channel power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ n-channel power MOSFETs

File Size 70.04K  /  7 Page

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    IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text pD - 94170 Advanced process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l F...n junction diode. --- --- 1.2 V TJ = 25C, IS = 43A, VGS = 0V --- 100 150 ns TJ = 25C, IF = 43A --- ...
Description HEXFET power MOSFET HEXFET功率MOSFET
75V Single n-channel HEXFET power MOSFET in a D2-pak package
75V Single n-channel HEXFET power MOSFET in a TO-262 package

File Size 122.50K  /  10 Page

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    IRF2807

International Rectifier
Part No. IRF2807
OCR Text pD - 91517 IRF2807 HEXFET(R) power MOSFET l l l l l l Advanced process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C ...n junction diode. --- --- 1.2 V TJ = 25C, IS = 43A, VGS = 0V --- 100 150 ns TJ = 25C, IF = 43A --- ...
Description power MOSFET(Vdss=75V, Id=82A?)
power MOSFET(Vdss=75V, Id=82A)

File Size 149.88K  /  8 Page

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    IRF3205L IRF3205S IRF3205

IRF[International Rectifier]
Part No. IRF3205L IRF3205S IRF3205
OCR Text pD - 94149 IRF3205S/L HEXFET(R) power MOSFET l l l l l l Advanced process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 17...n junction diode. --- --- 1.3 V TJ = 25C, IS = 62A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 62A --- 1...
Description power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)

File Size 144.83K  /  10 Page

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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205pBF
OCR Text pD-91279E IRF3205 HEXFET(R) power MOSFET l l l l l l Advanced process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C O...n junction diode. --- --- 1.3 V TJ = 25C, IS = 62A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 62A --- 1...
Description 55V Single n-channel HEXFET power MOSFET in a TO-220AB package
power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text pD - 9.1617A pRELIMINARY l l l l l l IRF3315S/L HEXFET(R) power MOSFET D Advanced process Technology Surface Mount (IRF3315S) Lo...n junction diode. --- --- 1.3 V TJ = 25C, IS = 43A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 43A --- ...
Description power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text pD -91623A AppROVED l l l l l IRF3315 D HEXFET(R) power MOSFET Advanced process Technology Dynamic dv/dt Rating 175C Operating T...n junction diode. --- --- 1.3 V TJ = 25C, IS = 12A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 12A --- ...
Description power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text pD - 91509C IRF3415S/L HEXFET(R) power MOSFET l l l l l l Advanced process Technology Surface Mount (IRF3415S) Low-profile through-h...n junction diode. --- --- 1.3 V TJ = 25C, IS = 22A, VGS = 0V --- 260 390 ns TJ = 25C, IF = 22A --- ...
Description power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text pD - 91477D IRF3415 HEXFET(R) power MOSFET l l l l l Advanced process Technology Dynamic dv/dt Rating 175C Operating Temperature Fas...n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 100A/s D S Note...
Description power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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