ms-120 pdf Datasheet P6 Full Text Search --- IC-ON-LINE


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ms-120 Datasheet PDF File

For ms-120 Found Datasheets File :: 58133 Search Time::2.125ms
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				Rohm CO.,LTD. ROHM[Rohm]
Part No.	BA3131FS BA3131
OCR Text	... 100 Hz) (dB) Output rise time (ms) 10 22 47 capacitor 100F, output smoothing voltage. - 35 - 42 - 48 150 300 550 Test conditi...120 110 DISTN (THD + Vn) (%) 0.1 0.05 VCC = 8V GV = 0dB DISTN (THD + Vn) (%) 100 0.1 0.05...
Description	Dual operational amplifier with switch, for audio use (3 inputs × 1 output × 2) ER 14C 14#16 PIN PLUG Dual operational amplifier with switch/ for audio use (3 inputs 1 output 2) Dual operational amplifier with switch, for audio use (3 inputs 1 output 2) Dual operational amplifier with switch, for audio use (3 inputs 】 1 output 】 2) Standard Linear LSIs > Operational amplifier > Operational amplifier with input multiplexer
File Size	107.77K / 9 Page	View it Online	Download Datasheet

				Broadcom Corporation. ETC Electronic Theatre Controls, Inc.
Part No.	BCM3033
OCR Text	...in the BCM3033 is a 10-bit, 114-MS/s DAC with differential analog outputs. Operation of the BCM3033 involves a serial or parallel bit stream input that can be passed through the FEC encoder or directly to the modulator. The resulting data i...
Description	QAMLink® Universal Modulator QAMLINK UNIVERSAL MODULATOR QAMLINK通用调制
File Size	134.59K / 2 Page	View it Online	Download Datasheet

				Broadcom Corporation. ETC
Part No.	BCM3341
OCR Text	...slots, potentially saving 10-20 ms of VoIP packet delay, providing higher voice quality. * Integrated DOCSISTM system clock synchronization provides clock synchronization in the entire voice path for a slip free voice. (CODEC<>DSP<>DOCSI...
Description	SINGLE CHIP 2 LINE VOLP BROADBAND IC
File Size	154.16K / 2 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BFG520W BFG520W_X BFG520W/X
OCR Text	...F = 2 dB. F = 2.5 dB. F = 3 dB. ms; Gmax = 11.8 dB. 0.2 (6) (7) 5 0.5 135 o (8) 2 1 45 o MLB825 (6) G = 11 dB. (7) G = 10 dB. (8) G = 9 dB. f = 2 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 . 1.0 90 o Fig.17 Common em...
Description	NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体 NPN 9 GHz wideband transistors
File Size	154.15K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text	...= 2.5 dB 0.2 Gmax = 13 dB 180 0 MS 0.2 G = 12 dB 0.2 G = 11 dB G = 10 dB 5 F = 2 dB OPT Fmin = 1. 9 dB 0.5 1 2 5 0 5 2 45 0.8 0.6 0.4 0.2 0 -135 0.5 1 2 -45 MRA685 1.0 -90 IC = 5 mA; VCE = 6 V; f = 2 GHz; Zo = 50 . Fig...
Description	NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 9GHz wideband transistor(NPN 9G赫兹宽带晶体
File Size	146.07K / 13 Page	View it Online	Download Datasheet

				INFINEON TECHNOLOGIES AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BTS117
OCR Text	...ow or high; VA=13.5 V td = 400 ms, RI = 2 , ID=0,5*3.5A td = 400 ms, RI = 2 , ID= 3.5A DIN humidity category, DIN 40 040 IEC climatic categ...120 2200 max. 73 5 2.2 60 300 4000 V A V A Unit VDS(AZ) IDSS VIN(th) IIN(1) 60 1.3 800 Tj =...
Description	10 A BUF OR INV BASED PRPHL DRVR, PSFM3 Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection) From old datasheet system
File Size	137.31K / 10 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS118D
OCR Text	...+ VS VIN = 0 and 10 V, td = 400 ms, RI = 2 W, RL = 6 W, VA = 13.5 V Electrostatic discharge voltage2) (Human Body Model) VESD according to J...120 240 VIN(th) 1.3 0.8 1.7 10 2.2 30 A mW IDSS 1.5 4 8 12 V A VDS(AZ) 42 55 V Symbol min. Values ty...
Description	Smart Lowside Power Switch
File Size	331.57K / 10 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BTS120 C67078-A5009-A2
OCR Text	....7 800 25 - - - - - V A W ms Short-circuit protection ISC = f (VDS) Parameter: VGS Diagram to determine ISC for Tj = - 55 ... + 150...120 Max. power dissipation Ptot = f (TC) Typ. drain-source on-state resistance RDS(on) = f (ID...
Description	From old datasheet system TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic) N-Channel TEMPFET
File Size	310.34K / 9 Page	View it Online	Download Datasheet

				Motorola Inc MOTOROLA[Motorola, Inc]
Part No.	BUX41 ON0260
OCR Text	...ollector-Current -- Peak (pw 10 ms) Collector-Emitter Voltage (RBE = 100 ) Collector-Emitter Voltage (VBE = - 2.5 V) Emitter-Base Voltage Co...120 TC, TEMPERATURE (C) VCEO(sus) Symbol Symbol TJ, Tstg VCBO VCER VEBO VCEX...
Description	15 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 120 WATTS From old datasheet system
File Size	122.51K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	...ulsed collector current, tp = 1 ms ICpuls 144 100 TC = 25 C TC = 80 C Power dissipation per IGBT Ptot 500 W + 150 -55 ... + 1...120 C 160 10 -1 0 10 10 1 10 0 10 ms DC 10 2 10 3 V TC VCE Collect...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

For ms-120 Found Datasheets File :: 58133 Search Time::2.125ms
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