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Cree
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| Part No. |
C4D20120A
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| OCR Text |
...f v r = 0 v, t j = 25c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz v r = 800 v, t j = 25?c, f = 1 mhz note: 1. this is a majority c...175 figure 3. current derating figure 4. power derating 0 50 100 150 200 250 25 50 75 100 125 150 17... |
| Description |
Silicon Carbide Schottky Diode
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| File Size |
339.23K /
5 Page |
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it Online |
Download Datasheet
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Cree
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| Part No. |
C5D50065D
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| OCR Text |
... v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. this is a majorit...175 c t j = 125 c 0 25 0 0.5 1 1.5 2 2.5 3 3.5 4 foward current, i foward voltage, v f (v) t j = -55... |
| Description |
Silicon Carbide Schottky Diode
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| File Size |
737.97K /
6 Page |
View
it Online |
Download Datasheet
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Ericsson Microelectronics ERICSSON[Ericsson]
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| Part No. |
PTF10045
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| OCR Text |
...iability. * Performance at 1650 mhz, 28 Volts - Output Power = 30 Watts - Power Gain = 11.5 dB Typ Full Gold Metallization Silicon Nitride P...175 -174 -176 -175 -178 -176 -179 -177 -180 -179 -178 -180 178 178 178 177 177 176 176 176 174 175 1... |
| Description |
30 Watts, 1.60.65 GHz GOLDMOS Field Effect Transistor 30 Watts 1.60-1.65 GHz GOLDMOS Field Effect Transistor 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor
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| File Size |
206.38K /
6 Page |
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it Online |
Download Datasheet
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Price and Availability
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