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    Electronic Theatre Controls, Inc.
Part No. MCH MCH0504KBB MCH0503KBB MCH0503KBG MCH0503KBS MCH0503KBU MCH0805KBU MCH0805HFG MCH1005HFG MCH0805EDB MCH1005EDB MCH0805EDG MCH1005EDG MCH0603HBB MCH0503HBB MCH0503EBG MCH0503LBG MCH0503HBG MCH1206EBG MCH1206EFG MCH1004EDG MCH0805LDG MCH0503HBS MCH0603HBS MCH0504HFG MCH0504KFG MCH0504EFG MCH0603LCS MCH0603LBS MCH0504LCB MCH1005HFB MCH1005KFB MCH1004LBG MCH1004LCS ELECTRONICTHEATRECONTROLSINC.-MCH0805KBU MCH0805KBS CH1005EFG CH1005ECB
OCR Text ...tations. Traditional thick-film methods severely limit performance characteristics and thin-film methods are limited in attainable ohmic values. The FineFilm method of manufacturing offers the best characteristics of both methods, plus adds...
Description Military Grade High Voltage Chip Resistors 军级高压贴片电阻

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    CAT93C56LET2 CAT93C57LET2 CAT93C56LET2E CAT93C57LET2E CAT93C56LET3 CAT93C57LET3 CAT93C57LE-1.8-GT2E CAT93C57LE-1.8-GT3E

ON Semiconductor
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Part No. CAT93C56LET2 CAT93C57LET2 CAT93C56LET2E CAT93C57LET2E CAT93C56LET3 CAT93C57LET3 CAT93C57LE-1.8-GT2E CAT93C57LE-1.8-GT3E CAT93C57LE-1.8T2E CAT93C57LE-1.8T3E CAT93C56VP2IT2 CAT93C57VP2IT2 CAT93C56ZD4E-1.8-GT2E CAT93C57ZD4E-1.8-GT2E CAT93C56ZD4E-1.8-GT3E CAT93C57ZD4E-1.8-GT3E CAT93C56ZD4E-1.8T2E CAT93C57ZD4E-1.8T2E CAT93C56ZD4E-1.8T3E CAT93C57ZD4E-1.8T3E CAT93C57LA-GT2E CAT93C56LE-1.8T2E CAT93C56LE-1.8T3E CAT93C56LE-GT2E CAT93C57LE-GT2E CAT93C57LI-GT2 CAT93C56LA-GT2E CAT93C56LA-GT3E CAT93C57LA-GT3E CAT93C56LE-1.8-GT3E CAT93C56LE-1.8-GT2E CAT93C57LI-GT2E CAT93C56LI-GT2 CAT93C56LI-GT2E CAT93C56VP2E-GT2 CAT93C57VP2E-GT2 CAT93C56VP2I-GT2 CAT93C57VP2I-GT2 CAT93C57VA-1.8-GT3E CAT93C57VA-1.8-GT2E CAT93C57VA-1.8T2E CAT93C57VE-1.8-GT3E CAT93C57VE-1.8-GT2E CAT93C57VE-1.8T2E CAT93C57ZD4E-GT2E CAT93C56ZD4E-GT2E CAT93C56ZD4E-GT3E CAT93C57YI-1.8-GT2E CAT93C57YI-1.8T2E CAT93C57YI-1.8-GT3E CAT93C57YI-1.8T3E CAT93C56ZD4A-GT2E CAT93C56ZD4A-GT3E CAT93C57ZD4A-GT2E CAT93C56VP2E-GT3 CAT93C57VP2E-GT3 CAT93C56ZD4I-1.8-GT2E CAT93C57ZD4I-1.8-GT2E CAT93C56ZD4I-1.8-GT3E CAT93C56XA-1.8T3E CAT93C57XA-1.8-GT3E CAT93C57XA-1.8-GT2E CAT93C57XA-GT2E CAT93C56XA-1.8T2E CAT93C57XA-1.8T2E CAT93C56XA-GT3E CAT93C56XA-1.8-GT3
OCR Text ...opriate AEC-Q100 and JEDEC test methods. 3. Block Mode, VCC = 5 V, 25C Table 3. D.C. OPERATING CHARACTERISTICS, CAT93C56, Die Rev. G - New Product (VCC = +1.8 V to +5.5 V, TA=-40C to +125C unless otherwise specified.) Symbol ICC1 ICC2 I...
Description 2-Kb Microwire Serial CMOS EEPROM

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    B72214P2621K101 B72214P2461K101 B72214P2231K101 B72214P2301K101 B72214P2321K101 B72214P2351K101 B72214P2381K101 B72214P2

EPCOS
Part No. B72214P2621K101 B72214P2461K101 B72214P2231K101 B72214P2301K101 B72214P2321K101 B72214P2351K101 B72214P2381K101 B72214P2271K101 B72214P2171K101 B72214P2681K101 B72214P2421K101 B72214P2141K101 B72214P2151K101 B72214P2251K101 B72214P2551K101 B72214P2511K101 B72214P2131K101 B72214P2211K101
OCR Text ...oltage Clamping voltage Test methods/Description The voltage between two terminals with the specified measuring current applied is called Vv (1 mADC @ 0.2 ... 2 s). The maximum voltage between two terminals with the specified standard im...
Description Leaded varistors

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    SGS Thomson Microelectronics
Part No. AN859
OCR Text ...rent The key to the charging methods used to ensure compatibility with different battery technologies, is the ability to monitor the charging parameters using a low-cost industry standard STMicroelectonics 8-bit microcontroller: the ST62...
Description ST6 - AN INTELLIGENT ONE HOUR MULTICHARGER FOR LI-ION, NIMH AND NICD BATTERIES

File Size 252.83K  /  12 Page

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    Marktech Optoelectronics
Part No. IE-75300-R-EM
OCR Text ... manual's purpose is to explain methods for connecting the IE-75300-R-EM to the IE75001-R and settings to be made when debugging various devices in the 75X or 75XL Series. Organization This manual generally contains the following sect...
Description IE-75300-R-EM User's Manual | User's Manual[07/1997] IE浏览 75300 - R的,电磁用户手册|用户手册[07/1997]

File Size 428.91K  /  91 Page

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    Zarlink Semiconductor
Part No. CLA90000
OCR Text ...ty, manufactured to MIL STD 883 methods and other industry recognized standards FEATURES I Low power, 0.5W/MHz/gate at 3V supply (NAND 2 loads) I High density of 5,425 available gates/mm2 I 3V and 5V I/O capability on the same device I ...
Description High Density CMOS Gate Arrays

File Size 466.92K  /  28 Page

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