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medium-gain Datasheet PDF File

For medium-gain Found Datasheets File :: 4854 Search Time::2.984ms
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				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM50TB-24B
OCR Text	MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-24B * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type ...
Description	122 x 32 pixel format, Compact LCD size MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	85.26K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM50HY-2H
OCR Text	MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HY-2H * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type ...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	67.54K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM50HA-H
OCR Text	MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HA-H * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type ...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	60.38K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	BUL3N7
OCR Text	MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-...Gain IC = 0.7A ____ VCE = 5 V IC = 2A_ VCE = 5 V IC = 0.7 A ___ V CC = 250 V 34 tr ts tf ts tf...
Description	MEDIUM VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
File Size	205.22K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM50HA-HB
OCR Text	MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HA-HB * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type ...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	76.15K / 5 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor] Panasonic Corporation
Part No.	AN7353S
OCR Text	...* characteristics and gain) in medium and high frequency band by DC control Volume for total gain adjustment built-in (11dB) With pin for low frequency band boost Drive circuit for current output built-in 0.10.1 1.27 0.3 7.20.3...
Description	Record Equalizer Amp. for Stereo Cassette Deck
File Size	45.28K / 3 Page	View it Online	Download Datasheet

				HITTITE[Hittite Microwave Corporation]
Part No.	HMC441LC3B
OCR Text	MEDIUM POWER AMPLIFIER, 6 - 18 GHz Features Gain: 17 dB Saturated Power: +22 dBm @ 27% PAE Single Supply Voltage: +5.0 V 50 Ohm Matched Input/Output RoHS Compliant 3 x 3 mm SMT package 8 AMPLIFIERS - SMT Typical Applications The H...
Description	GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 6 - 18 GHz From old datasheet system
File Size	255.65K / 6 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	FLU35ZMNBSP FLU35ZM
OCR Text	...pe and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE appl...Gain at 1dB G.C.P. Thermal Resistance Symbol IDSS gm Vp VGSO P1dB G1dB Rth Test Conditions VDS=5V, V...
Description	L-Band Medium & High Power GaAs FET From old datasheet system
File Size	222.72K / 8 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL107ME
OCR Text	Medium & High Power GaAs FET FEATURES * * * * * High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=13.5dB (Typ.) High PAE: add=47% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL107ME is a Power GaAs FET t...
Description	L-Band Medium & High Power GaAs FET
File Size	78.20K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL200IB-1 FLL200IB-2 FLL200IB-3
OCR Text	Medium & High Power GaAs FET FEATURES * * * * * High Output Power: P1dB = 42.5dBm (Typ.) High Gain: G1dB = 13.0dB (Typ.)@1.8GHz (FLL200IB-1) High PAE: add = 34% (Typ.) Proven Reliability Hermetically Sealed Package DESCRIPTION The FLL2...
Description	L-Band Medium & High Power GaAs FET
File Size	120.01K / 6 Page	View it Online	Download Datasheet

For medium-gain Found Datasheets File :: 4854 Search Time::2.984ms
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