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Alpha Industries, Inc.
ALPHA[Alpha Industries]
Alpha Industries Inc
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| Part No. |
AM038R1-00 50OHMS50OHMSOHMICADDED9-4-92OHMIC
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| OCR Text |
...e technology, and is based upon mbe layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facil... |
| Description |
Circular Connector; No. of Contacts:5; Series:MS27505; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Box Mount Receptacle; Insert Arrangement:15-5 RoHS Compliant: No
33-43 GHz GaAs MMIC Image Rejection Balanced Mixer
333 GHz GaAs MMIC Image Rejection Balanced Mixer
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| File Size |
121.18K /
2 Page |
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it Online |
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Alpha Industries Inc
ALPHA[Alpha Industries]
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| Part No. |
AM038S1-00
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| OCR Text |
...e technology, and is based upon mbe layers for the highest uniformity and repeatability. The diodes employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facil... |
| Description |
33?3 GHz GaAs MMIC Single Balanced Down Converter Mixer
33-43 GHz GaAs MMIC Single Balanced Down Converter Mixer
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| File Size |
86.21K /
2 Page |
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it Online |
Download Datasheet |
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MACOM[Tyco Electronics]
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| Part No. |
AM42-0039_1 AM42-0039 AM42-00391
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| OCR Text |
...cated using a mature 0.5 micron mbe based GaAs MESFET process. The process features full passivation for increased performance and reliability. This product is 100% RF tested to ensure compliance to performance specifications.
GND
V G... |
| Description |
2Watt C-Band VSAT Power Amplifier 5.9-7.1GHz
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| File Size |
73.96K /
3 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRG4BC30SS_04 IRG4BC30S-S IRG4BC30S-S_04 IRG4BC30SS04
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| OCR Text |
...O AS S EMBLY L OT CODE PAR T NU mbe R F 530S DAT E CODE YE AR 0 = 2000 WEE K 02 LINE L
OR
INT ERNAT IONAL RECT IF IER LOGO AS S EMB LY L OT CODE PART NUmbeR F 530S DAT E CODE P = DES IGNAT ES L EAD-F RE E PR ODUCT (OPT IONAL) YEAR 0 = 2... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
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| File Size |
201.21K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRL3302SPBF
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| OCR Text |
...S S E MB L Y L OT CODE PAR T NU mbe R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L
OR
INT E R NAT IONAL RE CT IF IE R L OGO AS S E MB LY L OT CODE PART NU MB E R F 530S DAT E CODE P = DE S IGNAT ES L EAD-F RE E PRODU CT (OPT IONAL... |
| Description |
HEXFET Power MOSFET
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| File Size |
317.37K /
9 Page |
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it Online |
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RFMD[RF Micro Devices]
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| Part No. |
TA0012
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| OCR Text |
...miconductor layer growth, using mbe (Molecular Beam Epitaxy). This is a very accurate and repeatable growth process. Since each layer is placed over the entire wafer at once, no photo-
Copyright 1997-2000 RF Micro Devices, Inc.
TA0012... |
| Description |
New High Power, High Efficiency HBT GSM Power Amplifier
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| File Size |
73.22K /
4 Page |
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it Online |
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Price and Availability
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