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Silan Microelectronics
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| Part No. |
SVF7N60T SVF7N60F
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| OCR Text |
...structure vdmos technology. the improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t... |
| Description |
600V N-CHANNEL MOSFET
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| File Size |
593.30K /
8 Page |
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it Online |
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Matsshita / Panasonic
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| Part No. |
2SC5739
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| OCR Text |
...ransistor (2SA2057, 2SC5739) is improved compared to current ones by more than 50 %. Collector to Emitter Saturation Voltage ; VCE(sat) is also 40 % improved. contribute to minimization of insertion space.
15.00.5
4.60.2 2.90.2
These... |
| Description |
High-speed Switching Power Transistor
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| File Size |
253.94K /
2 Page |
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it Online |
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Dynex
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| Part No. |
AN5177
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| OCR Text |
improved gate drive to ease GTO series connection problems.
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AN5177 Application Note
AN5177
improved Gate Drive For GTO Series Connections Application Note
AN5177-3.1 July 2002
I... |
| Description |
improved Gate Driver
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| File Size |
125.88K /
5 Page |
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it Online |
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PHILIPS[Philips Semiconductors]
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| Part No. |
SA56202 SA56202TW
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| OCR Text |
...teering voltages are because of improved drive strength and improved power efficiency. The drive strength is improved because with this signal shape a 15 % larger sine can be fit within the supply rails compared to direct-written sine signa... |
| Description |
One-chip motor driver
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| File Size |
101.19K /
24 Page |
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it Online |
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