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SDR9102N FL014N 41311 65947 FDD3680 882X1 7C341 AK4631
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  hexfets Datasheet PDF File

For hexfets Found Datasheets File :: 1022    Search Time::1.969ms    
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    IRF7311

IRF[International Rectifier]
Part No. IRF7311
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description HEXFET Power MOSFET

File Size 154.76K  /  7 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ...5 Top View Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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    IRF7314

International Rectifier
Part No. IRF7314
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description HEXFET Power MOSFET

File Size 138.29K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text ....058 6 5 Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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    IRF7317

IRF[International Rectifier]
Part No. IRF7317
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA
HEXFET Power MOSFET

File Size 147.74K  /  10 Page

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    IRF7319

IRF[International Rectifier]
Part No. IRF7319
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description HEXFET Power MOSFET
HEXFET?? Power MOSFET

File Size 128.05K  /  10 Page

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    IRF7379

IRF[International Rectifier]
Part No. IRF7379
OCR Text ... Description Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET

File Size 211.55K  /  10 Page

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    IRF737LC

IRF[International Rectifier]
Part No. IRF737LC
OCR Text ... This new series of Low Charge hexfets achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive...
Description 300V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET?? Power MOSFET

File Size 144.10K  /  8 Page

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    IRF7413A IRF7413ATR

International Rectifier
Part No. IRF7413A IRF7413ATR
OCR Text ... T op V iew Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=30V/ Rds(on)=0.0135ohm)
Power MOSFET(Vdss=30V, Rds(on)=0.0135ohm)
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 112.28K  /  9 Page

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    IRF7416 IRFB7416 IRF7416TR

International Rectifier
Part No. IRF7416 IRFB7416 IRF7416TR
OCR Text ...T op V ie w Fifth Generation hexfets from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device ...
Description Power MOSFET(Vdss=-30V/ Rds(on)=0.02ohm)
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm)
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 112.47K  /  9 Page

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For hexfets Found Datasheets File :: 1022    Search Time::1.969ms    
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