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SiTime Corp.
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| Part No. |
SIT1572
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| OCR Text |
...iseal ? , a poly silicon cap is grown on top of the resonator cavity, which eliminates the need for additional cap wafers or other exotic packaging. as a result, sitimes mems reson ator die can be used like any other s... |
| Description |
uPower, Ultra-Small 32.768 kHz ( -)50 ppm Oscillator
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| File Size |
620.62K /
7 Page |
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it Online |
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SiTime Corp.
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| Part No. |
SIT1576
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| OCR Text |
... episeal, a poly silicon cap is grown on top of the resonator cavity, which eliminates the need for additional cap wafers or other exotic packaging. as a result, sitimes mems res onator die can be used like any other sem... |
| Description |
1.2mm2 uPower, Low-Jitter, 1Hz - 2.5 MHz Super-TCXO
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| File Size |
992.51K /
10 Page |
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it Online |
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SiTime Corp.
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| Part No. |
SIT1630
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| OCR Text |
...episeal, a poly silicon cap is grown on top of the resonator cavity, which eliminates the need for additional cap wafers or other exotic packaging. as a resul t, sitimes mems resonator die can be used like any other semiconductor die.... |
| Description |
Ultra-Low Power, Ultra-Small 32.768 kHz or 16.384 kHz Oscillator
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| File Size |
725.18K /
9 Page |
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it Online |
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List of Unclassifed Man...
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| Part No. |
PGEW
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| OCR Text |
...ve lasing layers epitaxially grown on a single gaas substrate chip. this multi - layer design multiplies the output power by th...junction plane. the power output shows an excellent stability over the full mil specifi... |
| Description |
Low-Cost High-Power Laser-Diode Family
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| File Size |
624.58K /
6 Page |
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it Online |
Download Datasheet |
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