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g1db Datasheet PDF File

For g1db Found Datasheets File :: 740 Search Time::2.266ms
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				Eudyna Devices Inc
Part No.	FLC057WG
OCR Text	g1db = 9.0dB(Typ.) High PAE: add = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC057WG is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides s...
Description	C-Band Power GaAs FET
File Size	86.42K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLC157XP
OCR Text	g1db = 6.0dB(Typ.) High PAE: add = 29.5%(Typ.) Proven Reliability Drain Drain DESCRIPTION The FLC157XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superio...
Description	GaAs FET & HEMT Chips
File Size	55.15K / 4 Page	View it Online	Download Datasheet

				Toshiba
Part No.	TIM1414-4A
OCR Text	...0 GHz to 14.5 GHz * High gain - g1db = 6.5 dB at 14.0 GHz to 14.5 GHz * Broad Band Internally Matched * Hermetically sealed package RF Performance Specifications (Ta = 25 C) Characteristics Output Power at 1dB Compression Point Power Gain ...
Description	Microwave Power GaAs FET
File Size	351.74K / 4 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLK057XV
OCR Text	g1db = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Source Drain Drain DESCRIPTION The FLK057XV chip is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides ...
Description	GaAs FET & HEMT Chips
File Size	53.79K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	FLL400IP-3
OCR Text	... Symbol IDSS gm Vp VGSO P1dB g1db IDSR add P1dB g1db Rth Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 7.2A VDS = 5V, IDS = 720mA IGS = -720A VDS = 12V f = 2.5 GHz IDS = 2A VDS = 10V f = 2.5 GHz IDS = 5A (Note 1) Channel to Case Mi...
Description	L-Band Medium & High Power GaAs FET
File Size	212.01K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	FLM3742-25F
OCR Text	g1db = 10.5dB (Typ.) High PAE: add = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM3742-25F is a power GaAs FET that is internally matche...
Description	C-BAND INTERNALLY MATCHED FET
File Size	292.46K / 4 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
Part No.	FLM3742-4F
OCR Text	g1db = 12.0dB (Typ.) High PAE: add = 38% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM3742-4F is a power GaAs FET that is internally matched...
Description	C-Band Internally Matched FET
File Size	251.12K / 4 Page	View it Online	Download Datasheet

				EUDYNA[Eudyna Devices Inc]
Part No.	FLM7785-6F
OCR Text	g1db = 8.5dB (Typ.) High PAE: add = 31% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed DESCRIPTION The FLM7785-6F is a power GaAs FET that is internally matched for stan...
Description	C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
File Size	231.22K / 4 Page	View it Online	Download Datasheet

				Toshiba Corporation Toshiba Semiconductor
Part No.	TIM5964-35SLA-251
OCR Text	...39% at 5.9 to 6.75GHz HIGH GAIN g1db=8.5dB at 5.9GHz to 6.75GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB...
Description	MICROWAVE POWER GaAs FET TIM5964-35SLA-251 From old datasheet system
File Size	36.69K / 4 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TIM5964-4UL TIM4450-4UL
OCR Text	...m at 5.9GHz to 6.4GHz HIGH GAIN g1db=10.0dB at 5.9GHz to 6.4GHz BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at ...
Description	MICROWAVE POWER GaAs FET From old datasheet system
File Size	68.69K / 4 Page	View it Online	Download Datasheet

For g1db Found Datasheets File :: 740 Search Time::2.266ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |