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				ON Semiconductor
Part No.	MMSF10N02ZR2
OCR Text	...tics. and finally, mosfets have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. the resistive switching...
Description	10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET CASE 751-07, SOP-8
File Size	225.82K / 10 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP50P03HDL ON2621 ON2620
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM From old datasheet system
File Size	128.25K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTB75N03HDL MTB75N03HDL_D ON2451
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS From old datasheet system
File Size	304.17K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP60N06 MTP60N06HD MTP60N06HD_D ON2633
OCR Text	...tics. And finally, MOSFETs have finite internal gate resistance which effectively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching...
Description	From old datasheet system TMOS POWER FET 60 AMPERES 50 VOLTS TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
File Size	216.88K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMDF3N06HD ON2184 ON2183
OCR Text	...rier device, therefore it has a finite reverse recovery time, trr, due to the storage of minority carrier charge, QRR, as shown in the typical reverse recovery wave form of Figure 11. It is this stored charge that, when cleared from the dio...
Description	DUAL TMOS POWER MOSFET 60 VOLTS From old datasheet system
File Size	209.77K / 10 Page	View it Online	Download Datasheet

For finite Found Datasheets File :: 1604 Search Time::1.266ms
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