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fet2-18 Datasheet PDF File

For fet2-18 Found Datasheets File :: 87 Search Time::2.14ms
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					Renesas Electronics Corporation
Part No.	TBB1012MMTL-H TBB101211
OCR Text	...= 100 k , f = 900 mhz ? fet2 (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br...18 10 10 l4: 29 7 7 l3: ( 1 mm copper wire) unit: mm 21 10 8 l1: 10 rfc : 1 mm copper wire with ...
Description	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	156.46K / 14 Page	View it Online	Download Datasheet

					Alpha & Omega Semiconductors
Part No.	AO4926
OCR Text	FET2 VDS (V) = 30V VDS(V) = 30V ID=7.3A (VGS = 10V) ID = 9.5A RDS(ON) < 13.5m <24m (VGS = 10V) <29m (VGS = 4.5V) RDS(ON) < 16m UIS TESTED! R...18 125C 25C Is=20A 3 2.5 2 trr 1.5 1 S di/dt (A) Figure 16: Diode Reverse Recovery Charge and ...
Description	Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	237.17K / 8 Page	View it Online	Download Datasheet

					NEC
Part No.	UPA1857 UPA1857GR-9JG UPA1857GR-9JG-E2 UPA1857GR-9JG-E1
OCR Text	... x1.1 mm 2unit: PD (FET1) : PD (FET2) = 1 : 1 1unit 0 25 50 75 100 125 TA - Ambient Temperature - C 150 50 75 100 12...18 20 Tch - Channel Temperature - C VGS - Gate to Source Voltage - V 4 Data Sheet G15...
Description	Nch enhancement type power MOS FET N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	71.91K / 8 Page	View it Online	Download Datasheet

					Renesas Electronics Corporation
Part No.	TBB1008
OCR Text	...on are applicable for VHF unit (FET2) (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source b...18 15 0 0 0k 10 100 5 0 50 100 150 Ta (C) 200 0 Ambient Temper...
Description	Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
File Size	215.08K / 14 Page	View it Online	Download Datasheet

					panasonic
Part No.	UP01878
OCR Text	... Gate (FET1) 2: Source 3: Gate (FET2) 0 to 0.02 Absolute Maximum Ratings Ta = 25C 4: Drain (FET2) 5: Drain (FET1) SMini5-G1 Packag...18 60 RDS(on) VGS ID = 10 mA 10 VIN IO VO = 5 V Ta = 25C Forward transfer admittance ...
Description	From old datasheet system
File Size	71.13K / 3 Page	View it Online	Download Datasheet

					Renesas Electronics Corporation
Part No.	TBB1017 TBB1017SMTL-E
OCR Text	...V, RG = 100 k, f = 900 MHz * FET2 (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source br...18 RFC : 1 mm Copper wire with enamel 4 turns inside dia 6 mm Rev.1.00 Aug 07, 2006 page...
Description	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	232.38K / 14 Page	View it Online	Download Datasheet

					Renesas Electronics Corporation
Part No.	TBB1012 TBB1012MMTL-E
OCR Text	...V, RG = 100 k, f = 900 MHz * FET2 (Ta = 25C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source br...18 RFC : 1 mm Copper wire with enamel 4 turns inside dia 6 mm Rev.2.00 Aug 22, 2006 page...
Description	Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
File Size	144.81K / 14 Page	View it Online	Download Datasheet

					Sanyo Semicon Device
Part No.	FW111
OCR Text	...llowable Power Dissipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) -W P D - Ta M nte do na Al...
Description	P-Channel Silicon MOSFET Load S/W Applications
File Size	44.46K / 4 Page	View it Online	Download Datasheet

					Renesas Electronics Corporation
Part No.	TBB101006 TBB1010KMTL-E
OCR Text	...ion are applicable for FET1 and FET2 unit Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdow...18 0 15 10 5 Ambient Temperature Ta (C) * Value on the glass epoxy board (50mm x 40m...
Description	Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
File Size	82.65K / 8 Page	View it Online	Download Datasheet

					Sanyo Semicon Device
Part No.	FTD2017R
OCR Text	...D -- W 1.4 PD(FET1) -- PD(FET2) 1.2 M ou 1.0 nte do na 0.8 ce ram ic bo 0.6 ard (1 00 0m 0.4 m2 0 .8m 0.2 0 0 0.2 0.4 0.6 0.8 1.0 m) 1.2 1.4 IT11854 Allowable Power...
Description	N-Channel Silicon MOSFET General-Purpose Switching Device
File Size	46.23K / 4 Page	View it Online	Download Datasheet

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