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  fet2-10 Datasheet PDF File

For fet2-10 Found Datasheets File :: 187    Search Time::1.796ms    
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    AOC2800

Alpha & Omega Semiconductors
Part No. AOC2800
OCR Text ...red between gate and source of fet2 are shorted test circuit 3 vgs test circuit 3 vgs test circuit 3 vgs test circuit 3 vgs ( (( ( off off off off ) )) ) test circuit 4 rss test circuit 4 rss test circuit 4 rss test circuit 4 rss ( (( ( on...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 241.93K  /  5 Page

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    AO4922 AO492211

Alpha & Omega Semiconductors
Part No. AO4922 AO492211
OCR Text fet2 v ds 30 30 v gs 12 12 9.0 7.3 7.2 5.9 i dm 40 40 i ar 22 12 e ar 73 22 2.0 2.0 1.3 1.3 t j , t stg -55 to 150 -55 to 150 symbol typ max...10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 10 12 14 ...
Description Asymmetric Dual N-Channel MOSFET

File Size 236.44K  /  8 Page

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    SLA5088

List of Unclassifed Manufacturers
Sanken electric
Part No. SLA5088
OCR Text ...alent circuit diagram 3 FET1 2 FET2 7 8 10 FET2 9 12 FET2 11 14 FET2 13 1 15 Pins 4, 5, 6 : NC Characteristic curves ID-VDS Characteristics (Typical) FET 1 5 10V ID-VGS Characteristics (Typical) FET 2 FET 1 7 7 10V...
Description N - channel General purpose External dimensions A -SLA (15-pin)

File Size 20.53K  /  1 Page

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    IAM-91563-TR1 IAM-91563-BLK IAM-91563

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. IAM-91563-TR1 IAM-91563-BLK IAM-91563
OCR Text ...he LO is applied to the gate of FET2. The purpose of FET2 is to vary the transconductance of FET1 over a highly nonlinear region at the rate...10.4 mm RF 1890 MHz 220 nH Z = 50 500 pF 68 nH IF 250 MHz 91 Z = 50 LO 1640 MHz 4.7 p...
Description 0.8-6 GHz 3V Downconverter

File Size 180.10K  /  16 Page

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    AOSMD[Alpha & Omega Semiconductors]
Part No. AO4924
OCR Text ...RDS(ON) < 15.8m RDS(ON) < 19.5m FET2 V DS(V) = 30V I D=7.3A (V GS = 10V) <24m (V GS = 10V) <29m (V GS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Cr...10 6.8 13 3 31 nC nC nC ns ns ns ns ns nC 1885 15.8 25.0 19.5 1.85 Min 30 0.01 5 0.1 10 0.1 2.4 Typ ...
Description Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 152.88K  /  8 Page

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    IAM-91563-BLK IAM-91563-TR1

Agilent(Hewlett-Packard)
Part No. IAM-91563-BLK IAM-91563-TR1
OCR Text ...he lo is applied to the gate of fet2. the purpose of fet2 is to vary the transconductance of fet1 over a highly nonlinear region at the rate...10.4 mm 0.5 pf 220 nh 100 pf (2) lo 1640 mhz rf 1890 mhz 91 figure 18. test circuit. specifications...
Description 0.8-6 GHz 3V GaAs MMIC _ERo[^

File Size 208.44K  /  16 Page

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    Panasonic
Part No. XP1D874
OCR Text ... stg ? 55 to + 150 c 3 4 fet1 fet2 12 5 2.1 0.1 0.9 +0.2 ?0.1 0.9 0.1 0 to 0.1 1.25 0.10 1 3 2 0.20 0.05 0.425 1.3 0.1 2.0 0.1 54 0.65 0.65 0.2 0.1 0.12 +0.05 ?0.02 5? 10? 1: source (fet1) 4: gate (fet2) 2: drain 5: gate (fet1) 3: ...
Description Composite Device - Composite Transistors

File Size 74.09K  /  3 Page

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    AOC2802

Alpha & Omega Semiconductors
Part No. AOC2802
OCR Text ...red between gate and source of fet2 are shorted test circuit 3 vgs test circuit 3 vgs test circuit 3 vgs test circuit 3 vgs ( (( ( off off off off ) )) ) test circuit 4 rss test circuit 4 rss test circuit 4 rss test circuit 4 rss ( (( ( on...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 237.75K  /  5 Page

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    AO493211

Alpha & Omega Semiconductors
Part No. AO493211
OCR Text fet2(n-channel) v ds = 30v 30v i d = 11a (v gs =10v) 8a (v gs =10v) r ds(on) r ds(on) < 12.5m (v gs =10v) < 19m (vgs=...10 12.5 t j =125c 15 18 12 15 m w g fs 75 s v sd 0.4 0.7 v i s 4 a c iss 930 1170 1400 pf c oss 90 1...
Description Asymmetric Dual N-Channel MOSFET

File Size 495.17K  /  9 Page

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