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epitaxy Datasheet PDF File

For epitaxy Found Datasheets File :: 115 Search Time::0.766ms
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				OSA Opto Light GmbH
Part No.	127141
OCR Text	...ns in microns) n-Electrode n-epitaxy GaAlAs 325 120 150 typ. Active Layer p-epitaxy GaAlAs p-Electrode 325 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage...
Description	GaAlAs / GaAlAs LED Chips (substrate removed)
File Size	47.80K / 1 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	128144
OCR Text	...sions in microns) n-Electrode n-epitaxy GaAlAs 365 120 330 p-epitaxy GaAlAs 365 Wire bond contacts can also have a square 4. Electrical and optical characteristics (T=25C) p-Electrode Parameter Forward voltage Reverse cur...
Description	GaAlAs / GaAlAs LED Chips
File Size	48.32K / 1 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	115161H
OCR Text	...sions in microns) n-Electrode n-epitaxy GaAlAs 325 120 150 typ. Active Layer p-epitaxy GaAlAs p-Electrode 325 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25C) Parameter ...
Description	GaAlAs / GaAlAs Chips (substrate removed)
File Size	47.89K / 1 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	115161L
OCR Text	...sions in microns) n-Electrode n-epitaxy GaAlAs 325 120 150 typ. Active Layer p-epitaxy GaAlAs p-Electrode 325 Wire bond contacts can also have a spider shape 4. Electrical and optical characteristics (T=25C) Parameter ...
Description	GaAlAs / GaAlAs Chips (substrate removed)
File Size	47.87K / 1 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	115180
OCR Text	...ns in microns) n-Electrode n-epitaxy GaAlAs 265 120 180 Active Layer p-epitaxy GaAlAs p-Electrode 265 Wire bond contacts can also be circular or square 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage...
Description	GaAlAs / GaAlAs LED Chips (substrate removed)
File Size	47.74K / 1 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	194272
OCR Text	...ensions in microns) p-Electrode epitaxy AlInGaP 235 110 250 n-Substrate GaAs 235 n-Electrode 4. Electrical and optical characteristics (T=25C) Parameter Forward voltage Reverse current Symbol VF IR Conditi...
Description	AlInGaP / GaAs LED Chips
File Size	47.63K / 1 Page	View it Online	Download Datasheet

				OSA Opto Light GmbH
Part No.	136144
OCR Text	...sions in microns) n-Electrode n-epitaxy GaAlAs 365 120 150 typ. Active Layer p-epitaxy GaAlAs p-Electrode 365 Wire bond contacts can also be square 4. Electrical and optical characteristics (T=25C) Parameter Forward volta...
Description	GaAlAs / GaAlAs Chips (substrate removed)
File Size	48.05K / 1 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	GC15005-00 GC15006-00 GC15010-00 GC15003-00 GC15015-00 GC15009-00 GC15016-00 GC15012-00 GC15014-00 GC15011-00 GC15008-00 GC15007-00 GC15001-00 GC15004-00 GC15002-00 GC15013-00 GC15003 GC15005 GC15006 GC15009 GC15010 GC15012 GC15013 GC15014 GC15015 GC15016
OCR Text	...puter Controlled Grown Junction epitaxy Functional through Ku Band Octave Tuning RoHS Compliant 1 www.MICROSEMI.com Most products are supplied with a Gold finish and are suitable for RoHS complaint assembly. Consult factory for de...
Description	TUNING DIODES Frequency Linear Tuning Varactors TM
File Size	386.61K / 4 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	GC4941-12 GC4902-12 GC4943-12 GC4941 GC4942 GC4942-12 GC4943 GC4944 GC4944-12 GC4945 GC4945-12 GC4946 GC4946-12 GC4903 GC4903-12 GC4902
OCR Text	... High Quality, High Resistivity epitaxy Stable Low Leakage Passivation with Rugged Glass Body RoHS Compliant 1 1 APPLICATIONS These high speed beam lead PIN diodes are designed for stripline and microstrip circuits and are primarily ...
Description	CONTROL DEVICES - BEAMLEAD PIN DIODES
File Size	128.73K / 2 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	MG1037-16 MG1017-16 MG1036-16 MG1010-11 MG1040-16 MG1039-16 MG1001-11 MG1015-16
OCR Text	...grown at MSC by the Vapor Phase epitaxy technique. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. MDT Gunn diodes are available in a variety of microwave ceramic packages are available for operat...
Description	GUNN Diodes Cathode Heat Sink
File Size	159.55K / 4 Page	View it Online	Download Datasheet

For epitaxy Found Datasheets File :: 115 Search Time::0.766ms
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