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IRF[International Rectifier]
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| Part No. |
IRHN9150
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| OCR Text |
...V GS = 0V Tj = 25C, IF = -22A, di/dt -100A/s VDD -50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by...750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.120ohm, Id=-22A)
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| File Size |
81.76K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNA7264SE
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| OCR Text |
..., VGS = 0V Tj = 25C, IF = 34A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled b...750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per n... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)
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| File Size |
98.87K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNA7360SE
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| OCR Text |
...VGS = 0V Tj = 25C, IF = 24.3A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. -- -- -- -- -- -- 1.4 750 16 V ns C
Thermal Resistance
Parameter
RthJC RthJ-PCB Junctio... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
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| File Size |
105.14K /
4 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRHNA7460SE
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| OCR Text |
..., VGS = 0V Tj = 25C, IF = 20A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L...750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per n... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
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| File Size |
105.67K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNA9064
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| OCR Text |
... VGS = 0V Tj = 25C, IF = -48A, di/dt -100A/s VDD -50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substanti...750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48A)
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| File Size |
91.11K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHNA9160
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| OCR Text |
...VGS = 0V Tj = 25oC, IF = -38A, di/dt -100A/s VDD -50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled...750, test method 1019. International Rectifier has imposed a standard gate voltage of -12 volts per ... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A)
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| File Size |
123.17K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
JANSH2N7262 IRHF7230 IRHF8230 JANSR2N7262
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| OCR Text |
... VGS = 0V Tj = 25C, IF = 5.5A, di/dt 100A/s VDD 50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantial...750, test method 1019 condition A. International Rectifier has High dose rate testing may be done on... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
298.46K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM7360 IRHM8360
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| OCR Text |
...A, VGS = 0V Tj = 25C, IF =22A, di/dt 100A/s VDD 50V
A
V ns C
Intrinsic turn-on time is negligible. Turn-on speed is substantial...750, test method 1019 condition A. International Rectifier has imposed a standard gate condition of ... |
| Description |
400V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package REPETITIVE AVALANCHE AND dv/dt RATED 400V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
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| File Size |
318.05K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRHM7360SE JANSR2N7391
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| OCR Text |
..., VGS = 0V Tj = 25C, IF = 22A, di/dt 100A/s VDD 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. -- -- -- -- -- -- 1.4 750 16 V ns C
Thermal Resistance
Parameter
RthJC RthJA RthCS Junc... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=400V, Rds(on)=0.20ohm, Id=22A) TRANSISTOR N-CHANNEL(BVdss=400V Rds(on)=0.20ohm Id=22A)
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| File Size |
90.55K /
4 Page |
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it Online |
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