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IXYS
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| Part No. |
IXGN50N60BD2
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| OCR Text |
... = 25 c75a i c90 t c = 90 c50a i cm t c = 25 c, 1 ms 200 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 i cm = 100 a (rbsoa) clamped inductive load, l = 30 h @ 0.8 v ces p c t c = 25 c 250 w v rrm 600 v i favm t c = ... |
| Description |
IGBT Modules: Boost Configurated IGBT Modules
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| File Size |
146.46K /
5 Page |
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IXYS, Corp.
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| Part No. |
IXGK50N60C2D1
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| OCR Text |
...y leads) 75 a i c110 t c = 110 c50a i f110 t c = 110 c48a i cm t c = 25 c, 1 ms 300 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 100 a (rbsoa) clamped inductive load @ v ce 600 v p c t c = 25 c 480 w t j ... |
| Description |
HiPerFAST IGBT with Diode 75 A, 600 V, N-CHANNEL IGBT, TO-264AA
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| File Size |
624.54K /
6 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STP80NF10
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| OCR Text |
...ent (continuous) at t c = 100 o c50a i dm ( ? ) drain current (pulsed) 320 a p tot total dissipation at t c =25 o c 210 w derating factor 1.4 w/ o c dv/dt( 1 ) peak diode recovery voltage slope 9 v/ns e as ( 2 ) single pulse avalanche energ... |
| Description |
N - CHANNEL 100V - 0.014Ohm - 80A TO-220 LOW GATE CHARGE STripFET POWER MOSFET
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| File Size |
48.03K /
6 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
STB80NF10
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| OCR Text |
...rrent (continuos) at t c = 100 c50a i dm ( l ) drain current (pulsed) 320 a p tot total dissipation at t c =25 c 300 w derating factor 2 w/ c dv/dt (1) peak diode recovery voltage slope 9 v/ns e as (2) single pulse avalanche energy 245 m... |
| Description |
N - CHANNEL 100V - 0.014Ohm - 80A I 2 PAK/D 2 PAK LOW Qg STripFET POWER MOSFET
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| File Size |
86.16K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STGE50NB60HD
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| OCR Text |
...t (continuous) at t c = 100 o c50a i cm ( ) collector current (pulsed) 400 a p tot total dissipation at t c = 25 o c300w derating factor 2.4 w/ o c t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o ... |
| Description |
N-CHANNEL 50A - 600V ISOTOP POWERMESH IGBT
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| File Size |
132.83K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STP50NE10
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| OCR Text |
...nt (continuous) at t c = 25 o c50a i d drain current (continuous) at t c = 100 o c35a i dm ( ) drain current (pulsed) 200 a p tot total dissipation at t c = 25 o c150w derating factor 1 w/ o c dv/dt ( 1 ) peak diode recovery voltage ... |
| Description |
N-CHANNEL 100V - 0.021 OHM - 50A - TO-220 STRIPFET POWER MOSFET
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| File Size |
266.61K /
8 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STW50NB20
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| OCR Text |
...nt (continuous) at t c = 25 o c50a i d drain current (continuous) at t c = 100 o c32a i dm ( ) drain current (pulsed) 200 a p tot total dissipation at t c = 25 o c 280 w derating factor 2.24 w/ o c dv/dt( 1 ) peak diode recovery volt... |
| Description |
N-CHANNEL 200V - 0.047 OHM - 50A - TO-247 POWERMESH MOSFET
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| File Size |
263.51K /
8 Page |
View
it Online |
Download Datasheet
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